Direct experimental determination of the spontaneous polarization of GaN
We present a universal approach for determining the spontaneous polarization P sp of a
wurtzite semiconductor from the emission energies of excitons bound to the different types of …
wurtzite semiconductor from the emission energies of excitons bound to the different types of …
Anisotropic strain and phonon deformation potentials in GaN
We report optical phonon frequency studies in anisotropically strained c-plane-and a-plane-
oriented GaN films by generalized infrared spectroscopic ellipsometry and Raman scattering …
oriented GaN films by generalized infrared spectroscopic ellipsometry and Raman scattering …
Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires
We investigate the emission properties of excitons in GaAs nanowires containing quantum
disks formed by structural alternation between the zinc-blende and wurtzite phases, by …
disks formed by structural alternation between the zinc-blende and wurtzite phases, by …
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency
We investigate the nature of excitons bound to I 1 basal-plane stacking faults [(I 1, X)] in GaN
nanowire ensembles by continuous-wave and time-resolved photoluminescence …
nanowire ensembles by continuous-wave and time-resolved photoluminescence …
basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
I Tischer, M Feneberg, M Schirra, H Yacoub… - Physical Review B …, 2011 - APS
We investigate the 3. 32 eV defect-related emission band in GaN correlating transmission
electron microscopy and spatially and spectrally resolved cathodoluminescence at low …
electron microscopy and spatially and spectrally resolved cathodoluminescence at low …
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
The effect of Mg doping on stacking fault (SF) formation in c-plane GaN grown by metal-
organic chemical-vapor deposition has been studied for Mg concentration between 2× 10 18 …
organic chemical-vapor deposition has been studied for Mg concentration between 2× 10 18 …
Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors
We observe unusually narrow donor-bound exciton transitions (400 µeV) in the
photoluminescence spectra of GaN nanowire ensembles grown on Si (111) substrates at …
photoluminescence spectra of GaN nanowire ensembles grown on Si (111) substrates at …
Electron localization by a donor in the vicinity of a basal stacking fault in GaN
P Corfdir, P Lefebvre, J Ristić, JD Ganière… - Physical Review B …, 2009 - APS
We study the effects of the vicinity between a shallow donor nucleus and an I 1-type basal
stacking fault (BSF) in GaN. We propose a numerical calculation, in the “effective potential” …
stacking fault (BSF) in GaN. We propose a numerical calculation, in the “effective potential” …
Band-edge photoluminescence and reflectivity of nonpolar and semipolar GaN formed by epitaxial lateral overgrowth on sapphire
Coalesced nonpolar (11 2¯ 0) and semipolar (11 2¯ 2) GaN layers obtained by epitaxial
lateral overgrowth on sapphire have been studied by photoluminescence and reflectivity …
lateral overgrowth on sapphire have been studied by photoluminescence and reflectivity …
Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a-Plane and Semipolar (112̄2) GaN
SR Xu, ZY Lin, XY Xue, ZY Liu, JC Ma… - Chinese Physics …, 2012 - iopscience.iop.org
Abstract Nonpolar (11 bar 2 0) and semipolar (11 bar 2 2) GaN are grown on r-plane and m-
plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults …
plane sapphire by MOCVD to investigate the characteristics of basal plane stacking faults …