The intentionally designed band alignment of heterostructures and doping engineering are
keys to implement device structure design and device performance optimization. According …

In this study, the authors fabricate Sn‐doped 100‐nm thick polycrystalline β‐Ga2O3 synaptic
field‐effect transistors (FETs) emulating optical and electrical spike stimulation. When …

The β-Ga 2 O 3 films with a top layer doping of nitrogen (N) were prepared by RF magnetron
sputtering. The relationship of parameters (eg nitrogen flow rate and annealing …

The formation of n-Ga2O3/p-GaN heterojunctions has been studied intensively due to the
lack of p-Ga2O3. Metalorganic chemical vapor deposition (MOCVD) is known to provide a …

Zero-biased photodetectors have desirable characteristics for potentially next-generation
devices, including high efficiency, rapid response, and low power operation. In particular …

Abstract β-phase gallium oxide (β-Ga 2 O 3) is attracting attention as a deep—ultraviolet
photodetector (PD) owing to its large band gap of 4.9 eV, almost direct band gap …

Due to the excellent responsivity and high rejection ratio, Ga 2 O 3-based solar-blind
ultraviolet photodetectors (PDs) are attracting more and more attention. The excellent …

This paper presents a fabricated solar-blind phototransistor based on hydrogen-terminated
diamond. The phototransistor shows a large photocurrent and enhancement of responsivity …

Transition metal phosphorous trichalcogenides (MPX 3) have been extensively investigated
as photodetectors due to their wide-bandgap semiconductor properties. However, the …

We demonstrate a Sn-doped monoclinic gallium oxide (β-Ga2O3)-based deep ultraviolet
(DUV) phototransistor with high area coverage and manufacturing efficiency. The threshold …