Micro‐light emitting diode: from chips to applications

PJ Parbrook, B Corbett, J Han… - Laser & Photonics …, 2021 - Wiley Online Library
Typical light‐emitting diodes (LEDs) have a form factor>(300× 300) µm2. Such LEDs are
commercially mature in illumination and ultralarge displays. However, recent LED research …

Micro-LEDs, a manufacturability perspective

K Ding, V Avrutin, N Izyumskaya, Ü Özgür, H Morkoç - Applied Sciences, 2019 - mdpi.com
Compared with conventional display technologies, liquid crystal display (LCD), and organic
light emitting diode (OLED), micro-LED displays possess potential advantages such as high …

Recent progress of integrated circuits and optoelectronic chips

Y Hao, S Xiang, G Han, J Zhang, X Ma, Z Zhu… - Science China …, 2021 - Springer
Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern
information society. The IC industry has been driven by the so-called “Moore's law” in the …

Integration technology of micro-led for next-generation display

D Chen, YC Chen, G Zeng, DW Zhang, HL Lu - Research, 2023 - spj.science.org
Inorganic micro light-emitting diodes (micro-LEDs) based on III-V compound semiconductors
have been widely studied for self-emissive displays. From chips to applications, integration …

GaN‐based emissive microdisplays: a very promising technology for compact, ultra‐high brightness display systems

F Templier - Journal of the Society for Information Display, 2016 - Wiley Online Library
High‐brightness GaN‐based emissive microdisplays can be fabricated with different
approaches that are listed and described. They consist either of hybridizing a GaN LED …

III-nitride semiconductor lasers grown on Si

M Feng, J Liu, Q Sun, H Yang - Progress in Quantum Electronics, 2021 - Elsevier
III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …

Chip-scale GaN integration

KH Li, WY Fu, HW Choi - Progress in quantum electronics, 2020 - Elsevier
Abstract Blue LEDs and HEMTs based on III-Nitride have been flourishing commercially
across the globe, thanks largely to breakthroughs in the material quality of the wide …

Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters

Y Cai, X Zou, C Liu, KM Lau - IEEE Electron Device Letters, 2017 - ieeexplore.ieee.org
This letter reports a novel voltage-controlled light emitter with fast switching speed and
dimming capability using a monolithically integrated GaN HEMT-LED device. The integrated …

III-nitride semiconductor membrane electronics and optoelectronics for heterogeneous integration

R Chen, Y Song, R He, J Wang, J Li, T Wei - Progress in Quantum …, 2024 - Elsevier
The rapidly developing III-nitrides materials and devices technologies are driving the
advancements in hybrid heterogeneous structures for multi-material and multifunctional …

Active-matrix micro-light-emitting diode displays driven by monolithically integrated dual-gate oxide thin-film transistors

J Yang, HW Park, B Kim, YH Cho… - Journal of Materials …, 2022 - pubs.rsc.org
We demonstrate a reliable monolithic process to fabricate micro-light-emitting diodes
(μLEDs) driven by highly stable dual-gate structured amorphous indium gallium zinc oxide …