Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling

W Mortelmans, S De Gendt, M Heyns… - Applied Materials …, 2021 - Elsevier
The application of new materials in nanotechnology opens new perspectives and enables
ground-breaking innovations. Two-dimensional van der Waals (vdW) materials and more …

Photo-dynamics in 2D materials: Processes, tunability and device applications

F Zhang, J Pei, A Baev, M Samoc, Y Ge, PN Prasad… - Physics Reports, 2022 - Elsevier
The past decade has witnessed the rise of low-dimensional materials, such as graphene,
transition metal dichalcogenides, black phosphorus, organic–inorganic hybrid perovskites …

Tunable type-II band alignment and electronic structure of heterostructure: Interlayer coupling and electric field

CQ Nguyen, YS Ang, ST Nguyen, NV Hoang, NM Hung… - Physical Review B, 2022 - APS
In this work, we perform a first-principle study to investigate the atomic and electronic
structures of the C 3 N 4/MoSi 2 N 4 van der Waals heterostructure (vdWH) as well as its …

Interfacial characteristics, Schottky contact, and optical performance of a van der Waals heterostructure: Strain engineering and electric field tunability

HTT Nguyen, MM Obeid, A Bafekry, M Idrees, TV Vu… - Physical Review B, 2020 - APS
Two-dimensional graphene-based van der Waals heterostructures have received
considerable interest because of their intriguing characteristics compared with the …

A type-II GaSe/HfS2 van der Waals heterostructure as promising photocatalyst with high carrier mobility

MM Obeid, A Bafekry, SU Rehman, CV Nguyen - Applied Surface Science, 2020 - Elsevier
In this paper, the electronic, optical, and photocatalytic properties of GaSe/HfS 2
heterostructure are studied via first-principles calculations. The stability of the vertically …

Graphene/WSeTe van der Waals heterostructure: Controllable electronic properties and Schottky barrier via interlayer coupling and electric field

TV Vu, NV Hieu, HV Phuc, NN Hieu, HD Bui… - Applied Surface …, 2020 - Elsevier
The formation of the graphene-based van der Waals (vdW) heterostructures has shown
great potential for designing novel electronic and optoelectronic nanodevices. Here, we …

Layered graphene/GaS van der Waals heterostructure: controlling the electronic properties and Schottky barrier by vertical strain

KD Pham, NN Hieu, HV Phuc, IA Fedorov… - Applied Physics …, 2018 - pubs.aip.org
In this work, we construct an ultrathin graphene/GaS heterostructure and investigate its
electronic properties as well as the effect of vertical strain using density functional theory …

Interfacial Electronic Properties and Tunable Contact Types in Graphene/Janus MoGeSiN4 Heterostructures

NTT Binh, CQ Nguyen, TV Vu… - The Journal of Physical …, 2021 - ACS Publications
Two-dimensional MoSi2N4 is an emerging class of 2D MA2N4 family, which has recently
been synthesized in experiment. Herein, we construct ultrathin van der Waals …

Indirect to direct gap crossover in two-dimensional InSe revealed by angle-resolved photoemission spectroscopy

MJ Hamer, J Zultak, AV Tyurnina, V Zólyomi, D Terry… - ACS …, 2019 - ACS Publications
Atomically thin films of III–VI post-transition metal chalcogenides (InSe and GaSe) form an
interesting class of two-dimensional semiconductors that feature a strong variation of their …

Electric gating and interlayer coupling controllable electronic structure and Schottky contact of graphene/ van der Waals heterostructure

CV Nguyen - Physical Review B, 2021 - APS
Graphene-based van der Waals heterostructures have received tremendous interest from
both fundamental and experimental studies because they can enhance the properties and …