Substitutional doping in 2D transition metal dichalcogenides

L Loh, Z Zhang, M Bosman, G Eda - Nano Research, 2021 - Springer
Abstract Two-dimensional (2D) van der Waals transition metal dichalcogenides (TMDs) are
a new class of electronic materials offering tremendous opportunities for advanced …

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

A Rai, HCP Movva, A Roy, D Taneja, S Chowdhury… - Crystals, 2018 - mdpi.com
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …

Optimization of active surface area of flower like MoS2 using V-doping towards enhanced hydrogen evolution reaction in acidic and basic medium

S Bolar, S Shit, JS Kumar, NC Murmu… - Applied Catalysis B …, 2019 - Elsevier
Two dimensional layered transition metal dichalcogenides (TMDS) have immense potential
as inexpensive electro-catalyst for hydrogen evolution reaction (HER). Modification of crystal …

Single atom doping in 2D layered MoS2 from a periodic table perspective

S Sovizi, R Szoszkiewicz - Surface Science Reports, 2022 - Elsevier
Abstract Molybdenum Disulfide (MoS 2) is a well-known transition metal dichalcogenide with
a hexagonal structure arrangement analogous to graphene. Two dimensional (2D) MoS 2 …

Design of Basal Plane Edges in Metal-Doped Nanostripes-Structured MoSe2 Atomic Layers To Enhance Hydrogen Evolution Reaction Activity

D Vikraman, S Hussain, K Akbar… - ACS Sustainable …, 2018 - ACS Publications
Hydrogen (H2) is a clean and renewable energy source with a vital role to reduce global
dependence on fossil fuels. H2 evolution through electrochemical reduction of water is an …

Mn incorporated MoS2 nanoflowers: A high performance electrode material for symmetric supercapacitor

SS Singha, S Rudra, S Mondal, M Pradhan… - Electrochimica …, 2020 - Elsevier
Energy storage devices based on the two-dimensional transition metal dichalcogenides
(TMDs) have great interest due to their fascinating physical and chemical properties. In this …

Progress in the use of MoS2-based composites for microwave absorption

H Wang, J Feng, H Xing, M Lv, Y Zong, X Zhu… - Materials Science and …, 2024 - Elsevier
The emergence of the 5 G technology and universal smart electron devices urgently call for
the exploration of highly efficient microwave absorption materials. MoS 2 is a potential …

Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer

J Liu, X Liu, Z Chen, L Miao, X Liu, B Li, L Tang… - Nano Research, 2019 - Springer
Doping, which is the intentional introduction of impurities into a material, can improve the
metal-semiconductor interface by reducing Schottky barrier width. Here, we present high …

Adhesion of 2D MoS2 to Graphite and Metal Substrates Measured by a Blister Test

M Calis, D Lloyd, N Boddeti, JS Bunch - Nano Letters, 2023 - ACS Publications
Using a blister test, we measured the work of separation between MoS2 membranes from
metal, semiconductor, and graphite substrates. We found a work of separation ranging from …

A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities

R Younas, G Zhou, CL Hinkle - Applied Physics Letters, 2023 - pubs.aip.org
To support the ever-growing demand for faster, energy-efficient computation, more
aggressive scaling of the transistor is required. Two-dimensional (2D) transition metal …