Ferroelectric field effect transistors (FeFETs) have attracted attention as next-generation
devices as they can serve as a synaptic device for neuromorphic implementation and a one …

With the progress in silicon circuit miniaturization, lowering power consumption becomes the
major objective. Supply voltage scaling in ultralarge‐scale integration (ULSI) is limited by …

It has been shown that a ferroelectric material integrated into the gate stack of a transistor
can create an effective negative capacitance (NC) that allows the device to overcome …

The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of
interest in ferroelectric memory devices. Although both experimental and theoretical studies …

In this work, we report the first Negative-Capacitance FinFET. ALD Hf042Zr058O2 is added
on top of the FinFET's gate stack. The test devices have a floating internal gate that can be …

To further reduce the power dissipation in nanoscale transistors, the fundamental limit posed
by the Boltzmann distribution of electrons has to be overcome. Stabilization of negative …

Brain-inspired neuromorphic computing has shown great promise beyond the conventional
Boolean logic. Nanoscale electronic synapses, which have stringent demands for …

We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of
magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) …

We demonstrate a nearly hysteresis-free sub60-mV/decade subthreshold swing (SS)
operation in a p-type bulk metal-oxide-semiconductor field-effect transistor externally …

Temperature-and field-induced phase transitions in ferroelectric nanoscale TiN/Si: HfO 2/TiN
capacitors with 3.8 to 5.6 mol% Si content are investigated for energy conversion and …