Next-generation mid-infrared sources

D Jung, S Bank, ML Lee, D Wasserman - Journal of Optics, 2017 - iopscience.iop.org
The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital
applications in molecular sensing, security and defense, energy conservation, and …

The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials

RM Biefeld - Materials Science and Engineering: R: Reports, 2002 - Elsevier
This article comprehensively reviews the growth of III–V antimony-based semiconductor
materials using metal-organic chemical vapor deposition (MOCVD). It does this by first …

[图书][B] Handbook of lasers

MJ Weber - 2000 - books.google.com
Lasers continue to be an amazingly robust field of activity. Anyone seeking a photon source
is now confronted with an enormous number of possible lasers and laser wavelengths to …

Type-II interband quantum cascade laser at 3.8 µm

Lin, Yang, D Zhang, SJ Murry, SS Pei, AA Allerman… - Electronics Letters, 1997 - IET
The authors have demonstrated the first stimulated emission from Sb-based type-II quantum
cascade configuration. Laser emission at 3.8 µm has been observed for temperatures up to …

Electrically reconfigurable metasurfaces using heterojunction resonators

PP Iyer, M Pendharkar… - Advanced Optical Materials, 2016 - Wiley Online Library
An electrically reconfigurable metasurface comprising an array of 1D semiconductor Mie
resonators on a reflecting ground plane is theoretically demonstrated. The design is based …

The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films

C Lamberti - Surface Science Reports, 2004 - Elsevier
In the last couple of decades, high-performance electronic and optoelectronic devices based
on semiconductor heterostructures have been required to obtain increasingly strict and well …

[HTML][HTML] Type-I interband cascade lasers near 3.2 μm

Y Jiang, L Li, RQ Yang, JA Gupta, GC Aers… - Applied Physics …, 2015 - pubs.aip.org
Interband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb
quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages …

Progress and continuing challenges in GaSb-based III–V alloys and heterostructures grown by organometallic vapor-phase epitaxy

CA Wang - Journal of Crystal Growth, 2004 - Elsevier
This paper discusses progress in the preparation of mid-IR GaSb-based III–V materials
grown by organometallic vapor-phase epitaxy (OMVPE). The growth of these materials is …

The growth of antimonides by MOVPE

A Aardvark, NJ Mason, PJ Walker - … in crystal growth and characterization of …, 1997 - Elsevier
There are three main reasons for the study of antimonides, they are the optical [mainly
infrared], electrical [mainly Insb; the Gasb/Inas heterojunction] and structural [mainly …

Mid-IR vertical-cavity surface-emitting lasers

I Vurgaftman, JR Meyer… - IEEE journal of quantum …, 1998 - ieeexplore.ieee.org
We theoretically investigate the feasibility and potential performance of optically and
electrically pumped vertical-cavity surface-emitting lasers (VCSELs) emitting in the mid-IR …