We present the design and development of a Ka-band Doherty power amplifier (DPA) that
achieves high efficiency at power backoff (PBO) using a new load modulation scheme and a …

A two-stage Ka-band Doherty power amplifier (DPA) using a stacked field-effect transistor
(FET) cell is presented. We demonstrate, for the first time, the two critical parameters in a …

In this article, we present the analysis, design, and implementation of a wideband 10-W
monolithic microwave integrated circuit power amplifier (PA), fabricated in a low-cost 0.1-μm …

The design and implementation of a GaN stacked distributed 2-19GHz monolithic
microwave integrated circuit (MMIC) power amplifier (PA) is presented in this paper. The PA …

In this article, a wideband linearization technique for distributed amplifiers (DAs) is
presented. In particular, an auxiliary transistor is employed to create additional …

We present a stacked-FET monolithic millimeter-wave (mmW) integrated circuit Doherty
power amplifier (DPA). The DPA employs a novel asymmetrical stack gate bias to achieve …

This paper reports on the first stacked field-effect transistor (stacked-FET) submillimeter-
wave monolithic integrated circuit (S-MMIC) power amplifier cell operating at 0.3 THz and …

We present the development of an ultra-wideband and 1-W voltage-controlled attenuator
(VCA) using a 0.15-μm enhancement mode gallium arsenide pseudomorphic highelectron …

A compact wideband Ka-band monolithic microwave/millimeter-wave integrated circuit
(MMIC) power amplifier (PA) is demonstrated using a 0.15-μm pseudomorphic high electron …

This paper presents an innovative stacked-FET cell useful to enhance both, gain and output
power of RF and mm-wave power amplifiers. The new structure has been validated through …