Method of removing a substrate with a cleaving technique

InGaN/GaN edge emitting laser diodes using an epitaxial lateral overgrowth with a low-defect density area of more than 75%

HM Chang, S Gandrothula, S Gee, T Tak… - Japanese Journal of …, 2024 - iopscience.iop.org
We have successfully demonstrated InGaN/GaN edge-emitting laser diodes (EELDs) on a
fully coalesced epitaxial lateral overgrown film from a c-plane GaN substrate. We achieve a …
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Method of removing semiconducting layers from a semiconducting substrate

S Gandrothula, T Kamikawa - US Patent App. 17/049,156, 2021 - Google Patents
US20210242086A1 - Method of removing semiconducting layers from a semiconducting
substrate - Google Patents US20210242086A1 - Method of removing semiconducting …
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