A review of SiC IGBT: models, fabrications, characteristics, and applications
L Han, L Liang, Y Kang, Y Qiu - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
Along with the increasing maturity for the material and process of the wide bandgap
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …
A review of switching slew rate control for silicon carbide devices using active gate drivers
Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
Opportunities, challenges, and potential solutions in the application of fast-switching SiC power devices and converters
Power devices based on wide-bandgap material such as silicon carbide (SiC) can operate
at higher switching speeds, higher voltages, and higher temperatures compared to those …
at higher switching speeds, higher voltages, and higher temperatures compared to those …
Analysis and experiments for IGBT, IEGT, and IGCT in hybrid DC circuit breaker
As power semiconductor devices are the key components of hybrid DC circuit breakers
(HCBs), how to select suitable devices is critical for the whole HCB design. First, this paper …
(HCBs), how to select suitable devices is critical for the whole HCB design. First, this paper …
10-kV SiC MOSFET power module with reduced common-mode noise and electric field
CM DiMarino, B Mouawad, CM Johnson… - … on Power Electronics, 2019 - ieeexplore.ieee.org
The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10
kV is expected to revolutionize medium-and high-voltage systems. However, present power …
kV is expected to revolutionize medium-and high-voltage systems. However, present power …
Design Considerations and Development of an Innovative Gate Driver for Medium-Voltage Power Devices With High
Medium-voltage (MV) silicon carbide (SiC) devices have opened up new areas of
applications which were previously dominated by silicon-based IGBTs. From the perspective …
applications which were previously dominated by silicon-based IGBTs. From the perspective …
Highly compact isolated gate driver with ultrafast overcurrent protection for 10 kV SiC MOSFETs
Silicon Carbide (SiC) semiconductor technology offers the possibility to manufacture power
devices with un-precedented blocking voltages in the range of 10... 15 kV and superior …
devices with un-precedented blocking voltages in the range of 10... 15 kV and superior …
Parasitic inductance and capacitance-assisted active gate driving technique to minimize switching loss of SiC MOSFET
High di/dt and dv/dt of SiC MOSFET cause a considerable amount of overshoot in device
voltage and current during switching transients in the presence of inverter layout parasitic …
voltage and current during switching transients in the presence of inverter layout parasitic …
Design and experimental validation of a wire-bond-less 10-kV SiC MOSFET power module
C DiMarino, B Mouawad, CM Johnson… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the
potential to revolutionize medium-and high-voltage systems due to their high-speed …
potential to revolutionize medium-and high-voltage systems due to their high-speed …
Future shipboard MVdc system protection requirements and solid-state protective device topological tradeoffs
RM Cuzner, V Singh - IEEE Journal of Emerging and Selected …, 2017 - ieeexplore.ieee.org
The search for the optimum architecture for shipboard medium voltage dc integrated power
systems must take into account the short-circuit protection in addition to overarching goals of …
systems must take into account the short-circuit protection in addition to overarching goals of …