Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films
C Labbe, YT An, G Zatryb, X Portier… - …, 2017 - iopscience.iop.org
Terbium doped silicon oxynitride host matrix is suitable for various applications such as light
emitters compatible with CMOS technology or frequency converter systems for photovoltaic …
emitters compatible with CMOS technology or frequency converter systems for photovoltaic …
Pressure-induced phase transition in silicon nitride material
D Chen, BH Yu - Chinese Physics B, 2013 - iopscience.iop.org
The equilibrium crystal structures, lattice parameters, elastic constants, and elastic moduli of
the polymorphs α-, β-, and γ-Si 3 N 4, have been calculated by first-principles method. β-Si 3 …
the polymorphs α-, β-, and γ-Si 3 N 4, have been calculated by first-principles method. β-Si 3 …
[PDF][PDF] 用密度泛函理论研究氮化硅新相的电子结构, 光学性质和相变
余本海， 陈东 - 物理学报, 2014 - wulixb.iphy.ac.cn
运用第一性原理赝势方法, 对氮化硅新相(六方P 6 和P 6′ 相) 的电子结构, 光学性质和相变过程
进行分析, 研究能带结构, 介电函数谱, 反射谱和能量损失函数的变化机理. 研究发现, β→ P 6→ δ …
进行分析, 研究能带结构, 介电函数谱, 反射谱和能量损失函数的变化机理. 研究发现, β→ P 6→ δ …
[PDF][PDF] 铒离子注入绝缘体上Si 的射程分布研究
秦希峰， 马桂杰， 时术华， 王凤翔， 付刚， 赵金花 - 物理学报, 2014 - wulixb.iphy.ac.cn
利用离子注入掺杂技术设计, 制作半导体集成器件时, 了解离子注入半导体材料的射程分布和
横向离散规律等是很重要的. 用200—500 keV 能量的铒(Er) 离子注入SOI (silicon-on-insulator …
横向离散规律等是很重要的. 用200—500 keV 能量的铒(Er) 离子注入SOI (silicon-on-insulator …
Investigations of high-pressure and high-temperature behaviors of the newly-discovered willemite-II and post-phenacite silicon nitrides
D Chen - Chinese Physics B, 2013 - iopscience.iop.org
Using the first-principles method of the plane-wave pseudo-potential, the structural
properties of the newly-discovered willemite-II Si 3 N 4 (wII phase) and post-phenacite Si 3 …
properties of the newly-discovered willemite-II Si 3 N 4 (wII phase) and post-phenacite Si 3 …
Prédiction de matériaux polyazotés AxNy sous pression avec A= Sn, Si et Bi par algorithme évolutionnaire et calculs DFT
R Larhlimi - 2021 - theses.hal.science
L'étude de nouveaux matériaux énergétiques répond à un défi sociétal à qui souhaite
diminuer l'emprise des ressources fossiles et faire face au défi du réchauffement climatique …
diminuer l'emprise des ressources fossiles et faire face au défi du réchauffement climatique …
Optical and Luminiscent Properties of Terbium/Ytterbium Doped Aluminum Oxynitride and Terbium Doped Aluminum Nitride Thin Films
KYT Salinas - 2020 - search.proquest.com
In the present thesis the optical and light emission properties of two systems consisting of
Tb3+ and Yb3+ doped amorphous AlOxNy thin films and Tb3+ doped polycrystalline AlN …
Tb3+ and Yb3+ doped amorphous AlOxNy thin films and Tb3+ doped polycrystalline AlN …
Investigation of the Transverse Spread of Neodymium Ions Implanted in SOI
XF Qin, L Chen, FY Xu - IOP Conference Series: Materials …, 2017 - iopscience.iop.org
It is very important to consider the range distribution and transverse distribution of ions
implanted into semiconductor materials in design and fabrication of semiconductor …
implanted into semiconductor materials in design and fabrication of semiconductor …