A review of GaN HEMT broadband power amplifiers
KH Hamza, D Nirmal - AEU-International Journal of Electronics and …, 2020 - Elsevier
The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
In this paper, the RF and DC characteristics of AlGaN/GaN High electron mobility transistor
is analysed using discrete field plate technique. Surprisingly, it reduces the device parasitic …
is analysed using discrete field plate technique. Surprisingly, it reduces the device parasitic …
A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications
Hydrogen (H 2) has been widely used in H 2 fuelled vehicles, semiconductor fabrication,
medical treatments, chemical industry and industrial aerospace applications. However, H 2 …
medical treatments, chemical industry and industrial aerospace applications. However, H 2 …
Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer
S Gao, Q Zhou, X Liu, H Wang - IEEE Electron Device Letters, 2019 - ieeexplore.ieee.org
We propose two kinds of stacked materials that effectively yield low drain off-state leakage
current, high off-state breakdown voltage and low current collapse simultaneously in …
current, high off-state breakdown voltage and low current collapse simultaneously in …
Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications
In this paper, the RF and DC performance of AlGaN/GaN HEMT having p-type doping in
GaN buffer layer was analysed. Novelty of this work lies in the inclusion of P-type doping in …
GaN buffer layer was analysed. Novelty of this work lies in the inclusion of P-type doping in …
On the performance of GaN‐on‐silicon, silicon‐carbide, and diamond substrates
A Jarndal, L Arivazhagan… - International Journal of RF …, 2020 - Wiley Online Library
In this article, threading dislocations and its impact on the electrical and thermal
performance of GaN‐on‐Diamond (Dia),‐SiC, and‐Si high electron mobility transistor …
performance of GaN‐on‐Diamond (Dia),‐SiC, and‐Si high electron mobility transistor …
Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer
AS Augustine Fletcher, D Nirmal… - … Journal of RF and …, 2020 - Wiley Online Library
Abstract The performance of AlGaN/GaN HEMT is enhanced by using discrete field plate
(DFP) and AlGaN blocking layer. The AlGaN blocking layer provides an excellent …
(DFP) and AlGaN blocking layer. The AlGaN blocking layer provides an excellent …
An intensive study on assorted substrates suitable for high JFOM AlGaN/GaN HEMT
The performance comparison and the temperature profile of AlGaN/GaN HEMT on different
substrates are investigated. It results the maximum drain-source current (I DS) of 1.08 A/mm …
substrates are investigated. It results the maximum drain-source current (I DS) of 1.08 A/mm …