Investigation of quaternary barrier InAlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors (HEMTs) for high-speed and high-power applications
P Murugapandiyan, A Mohanbabu, VR Lakshmi… - Journal of Electronic …, 2020 - Springer
We report direct current (DC) and microwave performance of a 50-nm gate length (L g)
quaternary-based InAlGaN/GaN/AlGaN high-electron-mobility transistor (HEMT) on SiC …
quaternary-based InAlGaN/GaN/AlGaN high-electron-mobility transistor (HEMT) on SiC …
Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD
P Chauhan, S Hasenöhrl, E Dobročka… - Journal of Applied …, 2019 - pubs.aip.org
Two I nx A l 1− x N layers were grown simultaneously on different substrates [sapphire
(0001) and the Ga-polar GaN template], but under the same reactor conditions, they were …
(0001) and the Ga-polar GaN template], but under the same reactor conditions, they were …
Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si
D Biswas, H Fujita, N Torii, T Egawa - Journal of Applied Physics, 2019 - pubs.aip.org
Al x In y Ga (1− x− y) N/GaN heterostructures were grown on 4-in. p-type Si wafers to
investigate the effect of In composition in the quaternary nitride layer on the electrical …
investigate the effect of In composition in the quaternary nitride layer on the electrical …
Polarization-induced 2D hole gases in undoped (In) GaN/AlN heterostructures
R Chaudhuri - Integrated Electronics on Aluminum Nitride: Materials …, 2022 - Springer
P-type impurity doping of wide bandgap semiconductors like gallium nitride (GaN) is
fundamentally challenging due to its deep valence bands, leading to low density of slow …
fundamentally challenging due to its deep valence bands, leading to low density of slow …
A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl (Ga) N layers: a complete depth-resolved investigation
P Chauhan, S Hasenöhrl, Ľ Vančo, P Šiffalovič… - …, 2020 - pubs.rsc.org
Thick InAlN layers (In-molar fraction> 0.37) on GaN buffer layers were prepared using a
close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor. This …
close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor. This …
[PDF][PDF] Gucmann, F.,... Kuzmík, J.(2019). Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD. Journal …
P Chauhan, S Hasenöhrl, E Dobroka, MP Chauvat… - academia.edu
ABSTRACT Two In𝑥Al1− 𝑥N layers were grown simultaneously on different substrates
(sapphire (0001) and Ga-polar GaN template) but under the same reactor conditions were …
(sapphire (0001) and Ga-polar GaN template) but under the same reactor conditions were …