A comparative radiation analysis of reconfigurable memory technologies: FinFET versus bulk CMOS

S Azimi, C De Sio, A Portaluri, D Rizzieri… - Microelectronics …, 2022 - Elsevier
This work describes a comparative radiation reliability analysis between two reconfigurable
devices with different manufacturing technology: 28 nm CMOS-based and 16 nm FinFET …

CHARM High-Energy Ions for Microelectronics Reliability Assurance (CHIMERA)

K Bilko, RG Alía, A Costantino… - … on Nuclear Science, 2024 - ieeexplore.ieee.org
We present the progress related to CERN's capacity of delivering highly penetrating, high-
linear energy transfer (LET) heavy ions for radiation effect testing of electronic components …

Reliability assessment on 16 nm ultrascale+ MPSoC using fault injection and fault tree analysis

W Yang, B Du, C He, L Sterpone - Microelectronics Reliability, 2021 - Elsevier
A methodology is proposed to emulate and assess the single event effect in configuration
memory on 16 nm Ultrascale+ MPSoC. The solution depends on fault injection and fault tree …

Evaluating the computational performance of the xilinx ultrascale+ eg heterogeneous mpsoc

JA Belloch, G León, JM Badía, A Lindoso… - The Journal of …, 2021 - Springer
The emergent technology of Multi-Processor System-on-Chip (MPSoC), which combines
heterogeneous computing with the high performance of Field Programmable Gate Arrays …

[HTML][HTML] Fault injection and failure analysis on Xilinx 16 nm FinFET Ultrascale+ MPSoC

W Yang, Y Li, C He - Nuclear Engineering and Technology, 2022 - Elsevier
Energetic particle strikes the device and induces data corruption in the configuration
memory (CRAM), causing errors and even malfunctions in a system on chip (SoC). Software …

Multiple Cell Upsets in the Configuration RAM of a 7-nm FinFET SoC under Heavy Ions

J Mayo, C Durán, J Cueto-Rodríguez… - … on Nuclear Science, 2025 - ieeexplore.ieee.org
This manuscript investigates the heavy ion effects on the novel 7-nm FinFET AMD (formerly,
Xilinx) Versal SoC, namely on the configuration memory of the embedded FPGA. The …

Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs

S Gao, JH Yang, B Ye, C Cai, Z He, J Liu… - Nuclear Science and …, 2022 - Springer
Multiple-bit upsets (MBUs) have become a threat to modern advanced field-programmable
gate arrays (FPGAs) applications in radiation environments. Hence, many investigations …

Analysis of the Single-Event Latch-up Cross Section of a 16nm FinFET System-on-Chip using Backside Single-Photon Absorption Laser Testing and Correlation with …

M Fongral, V Pouget, F Saigné… - … on Nuclear Science, 2024 - ieeexplore.ieee.org
The single-event latch-up (SEL) cross section of a 16nm bulk finFET programmable system-
on-chip (SoC) is investigated by combining single photon absorption (SPA) laser testing …

Design of Onboard Avionics Based on Commercial Off-the-Shelf Parts for TianQi-2 Nanosatellite

L Jiang, W Lei, L Mingxiang, Z Teng… - Journal of Spacecraft and …, 2024 - arc.aiaa.org
With the development of modern small satellite technology, short development cycles, low
cost, and high reliability have become trends in the era of New Space. To achieve the above …

[HTML][HTML] Error detection and diagnosis for system-on-chip in space applications

MP Fernández - 2022 - dialnet.unirioja.es
The miniaturization of the manufacturing technologies of integrated circuits and the
associated increase in their performance have fostered in the last years an unprecedented …