A comprehensive review of recent progress on GaN high electron mobility transistors: Devices, fabrication and reliability
F Zeng, JX An, G Zhou, W Li, H Wang, T Duan, L Jiang… - Electronics, 2018 - mdpi.com
GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary
features in the applications of high power and high frequency devices. In this paper, we …
features in the applications of high power and high frequency devices. In this paper, we …
A brief overview of the rapid progress and proposed improvements in gallium nitride epitaxy and process for third-generation semiconductors with wide bandgap
AC Liu, YY Lai, HC Chen, AP Chiu, HC Kuo - Micromachines, 2023 - mdpi.com
In this paper, we will discuss the rapid progress of third-generation semiconductors with
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
wide bandgap, with a special focus on the gallium nitride (GaN) on silicon (Si). This …
Sensitivity analysis of Al0. 3Ga0. 7N/GaN dielectric modulated MOSHEMT biosensor
Emerging and newly proposed devices integrate various materials at different scales (from
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
Abnormal on current tendency in saturation region between high and light carbon doped buffer layer in p-GaN HEMT
CH Yeh, PH Chen, TC Chang… - IEEE Electron …, 2023 - ieeexplore.ieee.org
To reduce drain leakage current, carbon doping is introduced in the GaN layer of the p-GaN
HEMT device. The focus of this study is on the discussion of the abnormal current behavior …
HEMT device. The focus of this study is on the discussion of the abnormal current behavior …
Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications
The high-k nature of HfO 2 makes it a competitive gate oxide for various GaN-based power
devices, but the high trap densities at the HfO 2/GaN interface have hindered the …
devices, but the high trap densities at the HfO 2/GaN interface have hindered the …
Sensing metrics of a dual-cavity single-gate MOSHEMT
This paper presents the simulation study of the impact of dielectric modulation on the
characteristics of a single-gate single-cavity and a single-gate dual-cavity AlGaN/GaN …
characteristics of a single-gate single-cavity and a single-gate dual-cavity AlGaN/GaN …
Improved drain lag by reduced surface current in GaN HEMT via an ultrathin HfO2 blanket layer
This paper reports the influence of an ultrathin 1.5 nm atomic-layer-deposited HfO 2 blanket
layer as a gate dielectric on GaN high-electron-mobility transistors (HEMTs) grown on a 4H …
layer as a gate dielectric on GaN high-electron-mobility transistors (HEMTs) grown on a 4H …
Sensitivity estimation of biosensor in a tapered cavity MOSHEMT
The present research provides a comprehensive investigation of the structural modification
at the cavity under the gate (CUG) on the metal oxide semiconductor high electron mobility …
at the cavity under the gate (CUG) on the metal oxide semiconductor high electron mobility …
Design of a single gate metal oxide semiconductor high electron mobility transistor with a cavity under the gate
A Dastidar, TK Patra - 2021 IEEE International Women in …, 2021 - ieeexplore.ieee.org
This paper presents the impact of dielectric modulation on characteristics for an AlGaN/GaN
heterostructure using 2D Visual TCAD simulation. The paper presents the simulation of a …
heterostructure using 2D Visual TCAD simulation. The paper presents the simulation of a …
[PDF][PDF] Investigation of the Electrical Characteristics of AlGaN/AlN/GaN Heterostructure MOS-HEMTs with TiO2 High-k Gate Insulator
D Bouguenna, A Beloufa, K Hebali… - Int. J. Nanoelectron …, 2023 - ijneam.unimap.edu.my
This paper investigates the impact of TiO2 high-k gate insulator on the electrical
characteristics of AlGaN/AlN/GaN MOS-HEMT transistors using MATLAB and Atlas-TCAD …
characteristics of AlGaN/AlN/GaN MOS-HEMT transistors using MATLAB and Atlas-TCAD …