Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated on the same substrate using selective area epitaxy. It is observed that the structural and …
The development of integrated electronic circuitry ranks among the most disruptive and transformative technologies of the 20th century. Even though integrated circuits are …
Inspired by molecular motors in biology, there has been significant progress in building artificial molecular motors, using a number of quite distinct approaches. As the constructs …
We experimentally investigate the spontaneous emission (SE) rates of single InAs quantum dots embedded in GaAs photonic nanowires. For a diameter leading to the optimal …
I Friedler, C Sauvan, JP Hugonin, P Lalanne… - Optics express, 2009 - opg.optica.org
We design several single-photon-sources based on the emission of a quantum dot embedded in a semiconductor (GaAs) nanowire. Through various taper designs, we …
CZ Ning - physica status solidi (b), 2010 - Wiley Online Library
Semiconductor nanolasers represent the current frontier of research in the confluencing area of nanotechnology (or nanophotonics) and semiconductor lasers. In this paper, we …
We report on the photocurrent behavior of single GaN n–i–n nanowires (NWs) grown by plasma-assisted molecular-beam epitaxy on Si (111). These structures present a …
We experimentally demonstrate the directional emission of polarized light from single semiconductor nanowires. The directionality of this emission has been directly determined …
We investigate the spontaneous emission of a two-level system, eg, an atom or atomlike object, coupled to a single-end, ie, a semi-infinite, one-dimensional photonic waveguide …