The exploitation of interface effects turned out to be a powerful tool for generating exciting
material properties. Such properties include magnetism, electronic and ionic transport and …

It has recently been suggested that ferroelectric (FE) negative capacitance effects can be
used to achieve steep subthreshold slope field-effect transistors, which are greatly desired …

The exploration of interface effects in complex oxide heterostructures has led to the
discovery of novel intriguing phenomena in recent years and has opened the path toward …

Using spherical aberration corrected high-resolution and analytical scanning transmission
electron microscopy, we have quantitatively studied the lattice distortion and the …

We report on a surface-induced, insulating, electrically dead layer in ultrathin conducting La-
doped SrTiO 3 thin films. Systematic studies on electrical properties as a function of film …

Oxide heterostructures are an attractive platform for incorporation in field-effect transistors
(FETs) due to their diverse physical properties which can be tuned by electrostatic gating …

Complex oxide materials providing numerous physical properties can be fabricated in
different forms, for instance in thin films or heterostructures, due to their highly adaptable …

The conventional density functional theory (DFT) and dynamical mean field theory (DMFT) is
used to study the structural, electronic and the Mott-Hubbard metal-insulator phase transition …

The impact of atomic-scale structural distortions on the transport properties of epitaxial thin
film oxides and their interfaces is investigated through high resolution surface x-ray …