InAs/GaSb Type‐II Superlattice Detectors
EA Plis - Advances in Electronics, 2014 - Wiley Online Library
InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …
since they were first proposed as an infrared (IR) sensing material more than three decades …
[HTML][HTML] Multi-band SWIR-MWIR-LWIR Type-II superlattice based infrared photodetector
Abstract Type-II InAs/GaSb superlattices (T2SLs) has drawn a lot of attention since it was
introduced in 1970, especially for infrared detection as a system of multi-interacting quantum …
introduced in 1970, especially for infrared detection as a system of multi-interacting quantum …
Direct optical lithography enabled multispectral colloidal quantum-dot imagers from ultraviolet to short-wave infrared
S Zhang, C Bi, Y Tan, Y Luo, Y Liu, J Cao, M Chen… - ACS …, 2022 - ACS Publications
Complementary metal oxide semiconductor (CMOS) silicon sensors play a central role in
optoelectronics with widespread applications from small cell phone cameras to large-format …
optoelectronics with widespread applications from small cell phone cameras to large-format …
Room temperature bias-selectable, dual-band infrared detectors based on lead sulfide colloidal quantum dots and black phosphorus
A single photodetector capable of switching its peak spectral photoresponse between two
wavelength bands is highly useful, particularly for the infrared (IR) bands in applications …
wavelength bands is highly useful, particularly for the infrared (IR) bands in applications …
High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices
We propose a new approach in device architecture to realize bias-selectable three-color
shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II …
shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II …
Ultra-thin infrared metamaterial detector for multicolor imaging applications
JA Montoya, ZB Tian, S Krishna, WJ Padilla - Optics express, 2017 - opg.optica.org
The next generation of infrared imaging systems requires control of fundamental
electromagnetic processes–absorption, polarization, spectral bandwidth–at the pixel level to …
electromagnetic processes–absorption, polarization, spectral bandwidth–at the pixel level to …
Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices
We demonstrate the feasibility of the InAs/GaSb/AlSb type-II superlattice photodiodes
operating at the short wavelength infrared regime below 3 μm. An nip type-II InAs/GaSb/AlSb …
operating at the short wavelength infrared regime below 3 μm. An nip type-II InAs/GaSb/AlSb …
Electrically adjusted deep-ultraviolet/near-infrared single-band/dual-band imaging photodetectors based on Cs 3 Cu 2 I 5/PdTe 2/Ge multiheterostructures
Multispectral photodetection has garnered enormous research interest and has always been
challenging to date. Here, we present the realization of an electrically adjusted single …
challenging to date. Here, we present the realization of an electrically adjusted single …
[HTML][HTML] Broadband photodetection of Cd3As2: review and perspectives
Due to the topologically protected gapless electronic structure, Cadmium arsenide (Cd 3 As
2) is predicted to possess large and high-speed photoresponses in a broad spectrum. The …
2) is predicted to possess large and high-speed photoresponses in a broad spectrum. The …
High performance type-II InAs/GaSb superlattice infrared photodetectors with a short cut-off wavelength
This work investigates the potential of InAs/GaSb superlattice detectors for the
shortwavelength infrared spectral band. A barrier detector structure was grown by molecular …
shortwavelength infrared spectral band. A barrier detector structure was grown by molecular …