First-principles investigation of InAgASe4 (A= Ge, Sn) quaternary chalcogenides: Unveiling electronic, optical, and thermoelectric features

MS Khan, B Gul, B Ahmad, Z Ullah, G Khan… - Chemical Physics …, 2024 - Elsevier
Direct band gap quaternary semiconductors possess exclusive characteristics, such as
tunable optoelectronic qualities and decent thermal stability. Employing the recognized …

Crystal growth, electron structure and photo induced optical changes in novel AgxGaxGe1− xSe2 (x= 0.333, 0.250, 0.200, 0.167) crystals

OV Parasyuk, AO Fedorchuk, GP Gorgut, OY Khyzhun… - Optical Materials, 2012 - Elsevier
Quaternary single crystals AgxGaxGe1− xSe2 (x= 0.333, 0.250, 0.200, and 0.167) have
been grown by the two-zone Bridgman method. X-ray diffraction analysis has revealed that …

The Ag2S–In2S3–Si (Ge) S2 systems and crystal structure of quaternary sulfides Ag2In2Si (Ge) S6

VP Sachanyuk, GP Gorgut, VV Atuchin… - Journal of alloys and …, 2008 - Elsevier
Isothermal sections of quasi-ternary systems Ag2S–In2S3–Si (Ge) S2 at 298K were
constructed using XRD results. Vertical sections Ag2S–In2S3, AgInS2–SiS2, AgIn5S8–Ag1 …

Crystal Growth, Characterization, and Thermal Annealing of Nonlinear Optical Crystals AgGaGenSe2(n+1) (n = 1.5, 1.75, 2, 3, 4, 5, and 9) for Mid-infrared …

X Liu, J Peng, X Xiao, Z Xiong, G Huang… - Inorganic …, 2022 - ACS Publications
The new quaternary single crystals AgGaGe n Se2 (n+ 1)(n= 1.5, 1.75, 2, 3, 4, 5, and 9) have
high nonlinear optical property and can be used for mid-IR laser applications in high power …

Optical Spectra and Band Structure of AgxGaxGe1–xSe2 (x = 0.333, 0.250, 0.200, 0.167) Single Crystals: Experiment and Theory

AH Reshak, OV Parasyuk, AO Fedorchuk… - The Journal of …, 2013 - ACS Publications
Theoretical and experimental studies of the Ag x Ga x Ge1–x Se2 (x= 0.333, 0.250, 0.200,
0.167) single crystals are performed. These crystals possess a lot of intrinsic defects which …

Impact of structure complexity on optoelectronic and non-linear optical properties in quaternary Ag (Pb)–Ga (In)–Si (Ge)–S (Se) systems

M Piasecki, G Myronchuk, OY Khyzhun… - Journal of Alloys and …, 2022 - Elsevier
A common feature of chalcogenide crystals is the presence of the chalcogen-chalcogen
bonds, which result in very stable anion sub-structures (blocks) containing up to eight …

Single crystal preparation and properties of the AgGaGeS4–AgGaGe3Se8 solid solution

MV Shevchuk, VV Atuchin, AV Kityk… - Journal of crystal …, 2011 - Elsevier
Phase equilibria in the AgGaGeS4–AgGaGe3Se8 system were investigated using
differential-thermal analysis and phase X-ray diffraction. A continuous solid solution series …

Phase-matching and femtosecond difference-frequency generation in the quaternary semiconductor AgGaGe5Se12

V Petrov, F Noack, V Badikov, G Shevyrdyaeva… - Applied …, 2004 - opg.optica.org
We present data on the linear (transmission, index of refraction) and nonlinear (second-
order susceptibility) optical properties of the quaternary semiconductor AgGaGe_5Se_12 …

Orthorhombic nonlinear crystals of AgxGaxGe1− xSe2 for the mid-infrared spectral range

V Badikov, K Mitin, F Noack, V Panyutin, V Petrov… - Optical Materials, 2009 - Elsevier
We study the birefringence and nonlinearity of quaternary semiconductors of the type
AgGaGenSe2 (n+ 1), solid solutions in the system AgGaSe2–nGeSe2. The birefringence, eg …

Electronic and optical properties of thiogermanate AgGaGeS 4: theory and experiment

TV Vu, VD Dat, AA Lavrentyev, BV Gabrelian… - RSC …, 2023 - pubs.rsc.org
The electronic and optical properties of an AgGaGeS4 crystal were studied by first-principles
calculations, where the full-potential augmented plane-wave plus local orbital (APW+ lo) …