After many years of research and development, silicon carbide has emerged as one of the
most important wide band gap semiconductors. The first commercial SiC devices? power …

A general and practical model for heat generation that can be used in the heat conduction
equation for nonisothermal semiconductor device simulations is presented. The model is …

In this paper a system of evolution equations for energy models of a semiconductor device is
derived in a deductive way from a generally accepted expression for the free energy. Only …

For Silicon Carbide (SiC) high-voltage rectifier diodes, contradictions appear when the most
important parameter of the diodes, the minority carrier lifetime, is measured by different …

В настоящее время освоение широкозонных материалов: карбида кремния SiC и
нитридов III-й группы—становится одним из главных направлений развития …

High-voltage 4 H-SiC bipolar devices, including rectifier diodes, bipolar junction transistors,
and thyristors are discussed. The results of experimental and theoretical studies of the …

This chapter describes the modeling and the simulation of edgeemitting quantum well (QW)
lasers, based on the drift-diffusion equations and equations for the optical field. By applying …

In this paper, ways to create silicon carbide p+-emitters with high injection coefficients are
considered. Raising the emitter doping level, eliminating the deteriorated layer, and making …

Transport phenomena in Schottky diodes are analyzed at high injection levels of minority
carriers. It is shown that the correct description of these phenomena requires that the mode …

The parameters of electron–hole scattering EHS in silicon carbide SiC are estimated by
analyzing pulsed isothermal current–voltage characteristics of 6.0 kV 4H–SiC diodes over a …