In the modern semiconductor industry, there is a growing need to understand and combat
potential radiation damage problems. Space applications are an obvious case, but, beyond …

" Extreme environments" represents an important niche market for electronics and spans the
operation of electronic components in surroundings lying outside the domain of …

An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …

This attempt at circuit level single event effects (SEE) hardening of SiGe HBT logic provides
the first reported indication of the level of sensitivity in this important technology …

We review the emerging reliability issues associated with high-performance SiGe HBT
technologies which are being increasingly deployed in a wide variety of mixed-signal circuit …

The fifty year history of radiation effects in bipolar transistors at NSREC is summarized,
covering neutron-induced displacement damage, total ionizing dose response (including …

The effect of bias condition on total ionizing dose (TID) of Silicon–Germanium heterojunction
bipolar transistors (SiGe HBTs) is investigated. The SiGe HBTs are set at forward, saturated …

We present the results of gamma irradiation on third-generation, 200 GHz SiGe HBTs. Pre-
and post-radiation dc figures-of-merit are used to quantify the tolerance of the raised …

Presents the first experimental results of the effects of 63 MeV proton irradiation on SiGe
heterojunction bipolar transistor (HBT) analog and radio-frequency (RF) circuits and passive …