Tunable piezoresistive NEMS pressure sensor simulation under various environmental conditions
In this letter, the nanoelectromechanical system (NEMS)–based piezoresistive pressure
sensor is proposed on a circular diaphragm using a twin junctionless nanowire (JL-NW) …
sensor is proposed on a circular diaphragm using a twin junctionless nanowire (JL-NW) …
Self-heating mapping of the experimental device and its optimization in advance sub-5nm node junctionless multi-nanowire FETs
The junctionless multi-nanowire (JL-MNW) gate-all-around (GAA) field-effect transistor (FET)
has become an emerging device in the advanced node of modern semiconductor devices …
has become an emerging device in the advanced node of modern semiconductor devices …
Piezoresistive sensitivity enhancement below threshold voltage in sub-5 nm node using junctionless multi-nanosheet FETs
In this paper, the piezoresistive sensitivity is enhanced by applying uniform mechanical
stress (MS) on the multi-nanosheet (NS) channels of sub-5 nm junctionless field-effect …
stress (MS) on the multi-nanosheet (NS) channels of sub-5 nm junctionless field-effect …
Comparative Study of Piezoresistivity in Junctionless Gate-All-Around Nanosheet and Nanowire
A Angarapu, M Khosla - 2024 15th International Conference on …, 2024 - ieeexplore.ieee.org
Piezoresistivity is the property of certain materials, including semiconductors, to demonstrate
a shift in electrical resistivity in response to mechanical stress or strain. Gauge factor is used …
a shift in electrical resistivity in response to mechanical stress or strain. Gauge factor is used …