New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …

This review gives the reader an overview of the published results describing near band-
edge as well as defect related luminescence in aluminum nitride, also presenting findings …

Attaining control over the electrical conductivity of gallium nitride through impurity doping is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …

The interest in plasmonic technologies surrounds many emergent optoelectronic
applications, such as plasmon lasers, transistors, sensors and information storage. Although …

To aid the development of AlN-based optoelectronics, it is essential to identify the defects
that cause unwanted light absorption and to minimize their impact. Using hybrid functional …

Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich
AlGaN, is critical to realizing next-generation applications in high-power electronics and …

While high temperature annealing has been proven to be an effective strategy to reduce
threading dislocation density of AlN film, the point defect induced near-ultraviolet emission …

A controllable and smooth potassium hydroxide-based wet etching technique was
developed for the AlGaN system. High selectivity between AlN and AlxGa1ÀxN (up to 12Â) …

The thermal conductivity of AlN single crystals grown by physical vapor transport (PVT) and
hydride vapor phase epitaxy (HVPE) was measured in the range of 30 to 325 K by the 3ω …

A comprehensive energy map as a function of AlGaN composition over the whole alloy
range is presented for commonly observed point defects in nominally intrinsic, n‐, and p …