Silicon carbide (SiC) is a wide bandgap semiconductor having high critical electric field
strength, making it especially attractive for high-power and high-temperature devices …

Silicon carbide (SiC) is a fascinating material. In one way, it is very simple; there are only two
atoms building up the crystal—silicon and carbon, where each atom is sp3-hybridized and …

The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown
to enable superior material quality and high performance devices based on wide bandgap …

The chemical vapour deposition (CVD) technique could be used to fabricate a silicon
carbide (SiC) epitaxial layer. Methyltrichlorosilane (CH3SiCl3, MTS) is widely used as a …

We report on a deep level transient spectroscopy study of Cl-implanted n-and p-type 4H-SiC
epilayers. Samples were electrically characterized after each step of an isochronal …

Deep levels were detected in Fe-doped n-and p-type 4H-SiC using deep level transient
spectroscopy (DLTS). One defect level (EC–0.39 eV) was detected in n-type material. DLTS …

In this study some aspects of the chloride‐based CVD growth process have been
investigated by using both the approach to add HCl to the standard precursors and by using …

Abstract Methyltrichlorosilane (CH 3 SiCl 3, MTS), a favored precursor for chemical vapor
deposition (CVD) process of silicon carbide (SiC) epitaxial layer fabrication in a wide variety …

On-axis homoepitaxy of 4H-SiC has the advantage of producing epilayers that are free of
basal plane dislocations. Such layers can be highly beneficial for SiC-based high-power …

Tungsten was incorporated in SiC and W related defects were investigated using deep level
transient spectroscopy. In agreement with literature, two levels related to W were detected in …