This tutorial paper focuses on the physical origin of thermal droop, ie, the decrease in the
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …

Thermal droop, ie, the loss of emission efficiency over a certain temperature range, is an
important performance bottleneck for the successful commercial application of deep …

This study investigated the influence of high-quality AlN templates on the internal quantum
efficiency (IQE) of AlGaN-based multiple quantum wells (MQWs) using photoluminescence …

Carrier dynamics in AlGaN-based single quantum well (QW) structures grown on sapphire
are studied by means of time-integrated and time-resolved photoluminescence …

We investigate carrier localization in Al-rich AlGaN/AlN quantum well (QW) structures. Low
temperature time-resolved photoluminescence (PL) experiments reveal a strong variation of …

The carrier dynamics of Al‐rich AlGaN/AlN quantum well (QW) structures in the presence of
strong carrier localization is reported. Excitation density‐dependent photoluminescence (PL) …

An efficiency droop in GaN-based light-emitting diodes (LED) was characterized by
examining its general thermophysical parameters. An effective suppression of emission …

The internal quantum efficiency (IQE) and cathodoluminescence intensity line profile of
AlGaN multiple quantum well (MQW) structures on low‐dislocation face‐to‐face annealed …

To shift the emission band to long wavelength side, InGaN/GaN multiple quantum wells
were grown by metalorganic chemical vapor deposition (MOCVD) using pulsed delivery of …

We investigate the temperature dependence of efficiency droop in InGaN/GaN multiple-
quantum-well (MQW) blue light-emitting diodes (LEDs) in the temperature range from 20 to …