Nanoscale materials patterning and engineering by atomic force microscopy nanolithography

XN Xie, HJ Chung, CH Sow, ATS Wee - Materials Science and …, 2006 - Elsevier
This review article aims to provide an updated and comprehensive description on the
development of atomic force microscopy (AFM) nanolithography for structuring and …

Atomic and close-to-atomic scale manufacturing: a review on atomic layer removal methods using atomic force microscopy

PT Mathew, BJ Rodriguez, F Fang - Nanomanufacturing and Metrology, 2020 - Springer
Manufacturing at the atomic scale is the next generation of the industrial revolution. Atomic
and close-to-atomic scale manufacturing (ACSM) helps to achieve this. Atomic force …

Nano-oxidation of silicon surfaces: Comparison of noncontact and contact atomic-force microscopy methods

M Tello, R Garcı́a - Applied Physics Letters, 2001 - pubs.aip.org
Local oxidation lithography by atomic-force microscopy is emerging as a powerful method
for nanometer-scale patterning of surfaces. Here, we perform a comparative study of contact …

Recent progress of nano-technology with NSOM

JH Kim, KB Song - Micron, 2007 - Elsevier
Recent progress of nano-technology with near-field scanning optical microscope (NSOM) is
surveyed in this article. We focus mainly on NSOM, nano-scale spectroscopy with NSOM …

Nanoscale reduction of graphene oxide under ambient conditions

AC Faucett, JM Mativetsky - Carbon, 2015 - Elsevier
Localized voltage-induced reduction, initiated by a conductive atomic force microscope
probe under ambient conditions, is used to pattern electrically conductive reduced graphene …

Nanolithography on thin layers of PMMA using atomic force microscopy

C Martín, G Rius, X Borrisé, F Pérez-Murano - Nanotechnology, 2005 - iopscience.iop.org
A new technique for producing nanometre scale patterns on thin layers (< 30 nm thick) of
PMMA on silicon is described. The method consists of inducing the local modification of the …

Current, charge, and capacitance during scanning probe oxidation of silicon. I. Maximum charge density and lateral diffusion

JA Dagata, F Perez-Murano, C Martin… - Journal of applied …, 2004 - pubs.aip.org
A comprehensive analysis of the electrical current passing through the tip-substrate junction
during oxidation of silicon by scanning probe microscopy (SPM) is presented. This analysis …

Parallel writing by local oxidation nanolithography with submicrometer resolution

M Cavallini, P Mei, F Biscarini, R García - Applied physics letters, 2003 - pubs.aip.org
We demonstrate that the process of local oxidation of surfaces by atomic force microscopy
(AFM) can be upscaled in a straightforward way by using a solid support with multiple …

Electron tunneling characteristics on La0. 7Sr0. 3MnO3 thin-film surfaces at high temperature

K Katsiev, B Yildiz, K Balasubramaniam… - Applied Physics …, 2009 - pubs.aip.org
We report on the electron tunneling characteristics on La 0.7 Sr 0.3 MnO 3 (LSM) thin-film
surfaces up to 580 C in 10− 3 mbar oxygen pressure, using scanning tunneling microscopy …

Sub-10 nm patterning of few-layer MoS2 and MoSe2 nanolectronic devices by oxidation scanning probe lithography

YK Ryu, AI Dago, Y He, FM Espinosa… - Applied Surface …, 2021 - Elsevier
The properties of 2D materials devices are very sensitive to the physical, chemical and
structural interactions that might happen during processing. Low-invasive patterning …