Ultrawide-bandgap semiconductor of carbon-based materials for meta-photonics-heterostructure, lasers, and holographic displays
AS Abbas - AAPPS Bulletin, 2023 - Springer
Carbon-based materials (CM) growth techniques include common growth factors for meta-
photonics-heterostructure, holographic displays, and lasers. In this article, a review of basic …
photonics-heterostructure, holographic displays, and lasers. In this article, a review of basic …
[HTML][HTML] Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through …
R Kondo, A Yabutani, T Omori, K Yamada… - Applied Physics …, 2022 - pubs.aip.org
In this study, AlGaN-based ultraviolet-B band laser diodes with 150-mW peak output power
in pulsed operation were demonstrated at room temperature. The oscillation wavelength …
in pulsed operation were demonstrated at room temperature. The oscillation wavelength …
Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯ 1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers
S Mehari, DA Cohen, DL Becerra, S Nakamura… - Optics …, 2018 - opg.optica.org
The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for
continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low …
continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low …
Continuous‐Wave Operation of 457 nm InGaN Laser Diodes with Etched Facet Mirrors for On‐Chip Photonics
The success of silicon photonics is sparking widespread interest in photonic integrated
circuits at visible light wavelengths using SiN and other waveguiding platforms. Compact …
circuits at visible light wavelengths using SiN and other waveguiding platforms. Compact …
Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length
K Sato, T Omori, K Yamada, S Tanaka… - Japanese Journal of …, 2021 - iopscience.iop.org
The carrier injection efficiency η i of recently developed UV-B laser diodes (LDs) is
estimated on the basis of fundamental calculations and measurements. A general procedure …
estimated on the basis of fundamental calculations and measurements. A general procedure …
[HTML][HTML] Dynamic characteristics of 410 nm semipolar (202 1) III-nitride laser diodes with a modulation bandwidth of over 5 GHz
The dynamic characteristics of III-nitride multi-quantum well laser diodes (LDs) emitting at
410 nm were investigated. LDs were grown on semipolar (20 2 1) bulk GaN substrates and …
410 nm were investigated. LDs were grown on semipolar (20 2 1) bulk GaN substrates and …
A Review of Challenges, Solutions, and Improvements in the Performance of Deep Ultraviolet Semiconductor Laser Diodes (DUV LDs)
As eco-friendly light sources, AlGaN-based deep ultraviolet laser diodes (AlGaN DUV LDs)
employing aluminum gallium nitride that emit between 200 and 300 nm have seen various …
employing aluminum gallium nitride that emit between 200 and 300 nm have seen various …
Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes
We demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts
grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current …
grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current …
Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN
We demonstrate a vertical (< 1 departure) and smooth (2.0 nm root mean square line-edge
roughness (LER)) etch by chemically assisted Ar ion beam etching (CAIBE) in Cl 2 chemistry …
roughness (LER)) etch by chemically assisted Ar ion beam etching (CAIBE) in Cl 2 chemistry …
Toward heteroepitaxially grown semipolar GaN laser diodes under electrically injected continuous-wave mode: From materials to lasers
ABSTRACT III-nitrides based light-emitting diodes and laser diodes (LDs) have shown great
success as solid-state lighting sources, but the development of common c-plane (0001) …
success as solid-state lighting sources, but the development of common c-plane (0001) …