Ion beam lithography and nanofabrication: a review
To overcome the diffraction constraints of traditional optical lithography, the next generation
lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron …
lithographies (NGLs) will utilize any one or more of EUV (extreme ultraviolet), X-ray, electron …
[HTML][HTML] Proton beam writing
Proton beam (p-beam) writing is a new direct-writing process that uses a focused beam of
MeV protons to pattern resist material at nanodimensions. The process, although similar in …
MeV protons to pattern resist material at nanodimensions. The process, although similar in …
[图书][B] Advanced computing in electron microscopy
EJ Kirkland - 1998 - Springer
Earl J. Kirkland Third Edition Earl J. Kirkland Third Edition Page 1 Earl J. Kirkland Advanced
Computing in Electron Microscopy Third Edition Earl J. Kirkland Advanced Computing in …
Computing in Electron Microscopy Third Edition Earl J. Kirkland Advanced Computing in …
CASINO: A new Monte Carlo code in C language for electron beam interaction—Part I: Description of the program
This paper is a guide to the ANSI standard C code of CASINO program which is a single
scattering Monte CArlo SImulation of electroN trajectory in sOlid specially designed for low …
scattering Monte CArlo SImulation of electroN trajectory in sOlid specially designed for low …
CASINO: A new monte carlo code in C language for electron beam interactions—part II: Tabulated values of the mott cross section
This paper presents routines to compute the Mott cross section used in the CASINO program
(Monte CArlo SImulation of electroNtrajectory in sOlid). The routines used tabulated values …
(Monte CArlo SImulation of electroNtrajectory in sOlid). The routines used tabulated values …
[图书][B] Advances in imaging and electron physics
PW Hawkes - 2004 - books.google.com
* A special volume devoted principally to therole of the late Sir Charles Oatley in the
development of the scanning electron microscopeings* It contains historical articles and …
development of the scanning electron microscopeings* It contains historical articles and …
Determining the resolution limits of electron-beam lithography: direct measurement of the point-spread function
One challenge existing since the invention of electron-beam lithography (EBL) is
understanding the exposure mechanisms that limit the resolution of EBL. To overcome this …
understanding the exposure mechanisms that limit the resolution of EBL. To overcome this …
A Monte Carlo program for quantitative electron-induced X-ray analysis of individual particles
CU Ro, J Osán, I Szalóki, J de Hoog… - Analytical …, 2003 - ACS Publications
A versatile Monte Carlo program for quantitative particle analysis in electron probe X-ray
microanalysis is presented. The program includes routines for simulating electron-solid …
microanalysis is presented. The program includes routines for simulating electron-solid …
[HTML][HTML] Optimising large-area crystal orientation mapping of nanoscale β phase in α+ β titanium alloys using EBSD
Abstract α+ β titanium alloys, such as the commercially important alloy Ti-6Al-4V (Ti64),
develop complex textures during thermomechanical processing due to the allotropic phase …
develop complex textures during thermomechanical processing due to the allotropic phase …
[图书][B] Handbook of self assembled semiconductor nanostructures for novel devices in photonics and electronics
M Henini - 2011 - books.google.com
The self-assembled nanostructured materials described in this book offer a number of
advantages over conventional material technologies in a wide range of sectors. World …
advantages over conventional material technologies in a wide range of sectors. World …