State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Nanowires for energy: A review
Semiconductor nanowires (NWs) represent a new class of materials and a shift from
conventional two-dimensional bulk thin films to three-dimensional devices. Unlike thin film …
conventional two-dimensional bulk thin films to three-dimensional devices. Unlike thin film …
Self-aligned wrapped-around structure
An embodiment vertical wrapped-around structure and method of making. An embodiment
method of making a self-aligned vertical structure-all-around device including forming a …
method of making a self-aligned vertical structure-all-around device including forming a …
Vertical nanowire array-based field effect transistors for ultimate scaling
G Larrieu, XL Han - Nanoscale, 2013 - pubs.rsc.org
Nanowire-based field-effect transistors are among the most promising means of overcoming
the limits of today's planar silicon electronic devices, in part because of their suitability for …
the limits of today's planar silicon electronic devices, in part because of their suitability for …
Vertical silicon nanowire field effect transistors with nanoscale gate-all-around
Y Guerfi, G Larrieu - Nanoscale research letters, 2016 - Springer
Nanowires are considered building blocks for the ultimate scaling of MOS transistors,
capable of pushing devices until the most extreme boundaries of miniaturization thanks to …
capable of pushing devices until the most extreme boundaries of miniaturization thanks to …
Vertical cross point arrays for ultra high density memory applications
B Bateman - US Patent 8,937,292, 2015 - Google Patents
US PATENT DOCUMENTS 2008/0278989 A1 11/2008 Lee et al. 2009/0020744 A1 1/2009
Mizukami et al................. 257/4 6,569,745 B2 5, 2003 HSu 2009/0027976 A1 1/2009 Brewer …
Mizukami et al................. 257/4 6,569,745 B2 5, 2003 HSu 2009/0027976 A1 1/2009 Brewer …
Vertical sandwich gate-all-around field-effect transistors with self-aligned high-k metal gates and small effective-gate-length variation
X Yin, Y Zhang, H Zhu, GL Wang, JJ Li… - IEEE Electron …, 2019 - ieeexplore.ieee.org
A new type of vertical nanowire (NW)/nanosheet (NS) field-effect transistors (FETs), termed
vertical sandwich gate-all-around (GAA) FETs (VSAFETs), is presented in this work …
vertical sandwich gate-all-around (GAA) FETs (VSAFETs), is presented in this work …
Silicon nanostructures for thermoelectric devices: A review of the current state of the art
G Schierning - physica status solidi (a), 2014 - Wiley Online Library
Silicon is the most important element of modern semiconductor industry. As a thermoelectric
converter material, it would be able to promote applications dramatically since device …
converter material, it would be able to promote applications dramatically since device …
Top-down fabrication of Ge nanowire arrays by nanoimprint lithography and hole gas accumulation in Ge/Si core–shell nanowires
Germanium (Ge) nanowire arrays are expected to be a promising channel material for high-
performance field-effect transistors (FETs) due to their excellent electronic transport …
performance field-effect transistors (FETs) due to their excellent electronic transport …
Local bit lines and methods of selecting the same to access memory elements in cross-point arrays
CH Siau, C Chevallier, D Rinerson, SF Lim… - US Patent …, 2012 - Google Patents
Embodiments relate generally to semiconductors and memory technology, and more
particularly, to systems, inte grated circuits, and methods to implement a memory archi …
particularly, to systems, inte grated circuits, and methods to implement a memory archi …