Double-gate TFET with vertical channel sandwiched by lightly doped Si

JH Kim, S Kim, BG Park - IEEE Transactions on Electron …, 2019 - ieeexplore.ieee.org
This paper examines a tunnel field-effect transistor (TFET) as a promising device for
achieving steeper switching and better electrical performances in low-power operation. It …

Vertically-grown TFETs: an extensive analysis

AS Geege, TSA Samuel - Silicon, 2023 - Springer
TFET is an exciting device for ultra-low and low power implementations since it improves
electrical performance while also providing steeper switching ratio. This study encloses with …

An electrostatic analytical modeling of high-k stacked gate-all-around heterojunction tunnel FETs considering the depletion regions

C Usha, P Vimala - AEU-International Journal of Electronics and …, 2019 - Elsevier
This paper deals with the analytical modelling of high-k stacked Gate-All-Around
Heterojunction Tunnel Field Effect Transistor (GAA-HJTFET) considering the depletion …

A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions

C Usha, P Vimala, TSA Samuel… - Journal of Computational …, 2020 - Springer
A new two-dimensional analytical model is proposed for the electrical attributes of a gate-all-
around heterojunction tunnel field-effect transistor, including the potential distribution, lateral …

Analytical drain current model for fully depleted surrounding gate TFET

C Usha, P Vimala - Journal of Nano Research, 2018 - Trans Tech Publ
In this paper, we propose the analytical modeling for fully depleted surrounding gate TFET
surrounding gate tunneling field effect transistor with single metal gate. This model …

An analytical modeling of conical gate-all-around tunnel field effect transistor

C Usha, P Vimala - Silicon, 2021 - search.proquest.com
In this paper a new analytical modeling of Conical Gate-All-Around Tunnel Field Effect
Transistor has been proposed and verified by TCAD Simulation. The Electrostatic …

Comparative Analysis of TFET Structures for Low Power Sensor Design

P Kumar, T Chaudhary, B Raj - 2024 IEEE Third International …, 2024 - ieeexplore.ieee.org
The use of biosensors is growing in significance in the quickly evolving world of technology
today. Due to their extensive utilization, biosensors have sparked a great deal of research …

[图书][B] Electrical and electronic devices, circuits and materials: Design and applications

SL Tripathi, PA Alvi, U Subramaniam - 2021 - books.google.com
The increasing demand in home and industry for electronic devices has encouraged
designers and researchers to investigate new devices and circuits using new materials that …

Improving on current using new double-material heterojunction gate all around TFET (DMHJGAA TFET): Modeling and simulation

P Vimala, N Shree, U Priyadarshini… - International Journal of …, 2021 - World Scientific
Transistor, which is the building block of all electronic devices, has continuously scaled
down its dimensions for better efficiency since the advent of CMOS circuits. Due to the …

Study on the nonlinear output characteristic of tunnel field-effect transistor

JH Kim, S Kim - JOURNAL OF SEMICONDUCTOR TECHNOLOGY …, 2020 - dbpia.co.kr
This paper investigates the output characteristics in tunnel field-effect transistor (TFET). The
nonlinear current (NLC) in output characteristics has remained as a critical issue for …