Double-gate TFET with vertical channel sandwiched by lightly doped Si
This paper examines a tunnel field-effect transistor (TFET) as a promising device for
achieving steeper switching and better electrical performances in low-power operation. It …
achieving steeper switching and better electrical performances in low-power operation. It …
Vertically-grown TFETs: an extensive analysis
AS Geege, TSA Samuel - Silicon, 2023 - Springer
TFET is an exciting device for ultra-low and low power implementations since it improves
electrical performance while also providing steeper switching ratio. This study encloses with …
electrical performance while also providing steeper switching ratio. This study encloses with …
An electrostatic analytical modeling of high-k stacked gate-all-around heterojunction tunnel FETs considering the depletion regions
This paper deals with the analytical modelling of high-k stacked Gate-All-Around
Heterojunction Tunnel Field Effect Transistor (GAA-HJTFET) considering the depletion …
Heterojunction Tunnel Field Effect Transistor (GAA-HJTFET) considering the depletion …
A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions
A new two-dimensional analytical model is proposed for the electrical attributes of a gate-all-
around heterojunction tunnel field-effect transistor, including the potential distribution, lateral …
around heterojunction tunnel field-effect transistor, including the potential distribution, lateral …
Analytical drain current model for fully depleted surrounding gate TFET
In this paper, we propose the analytical modeling for fully depleted surrounding gate TFET
surrounding gate tunneling field effect transistor with single metal gate. This model …
surrounding gate tunneling field effect transistor with single metal gate. This model …
An analytical modeling of conical gate-all-around tunnel field effect transistor
In this paper a new analytical modeling of Conical Gate-All-Around Tunnel Field Effect
Transistor has been proposed and verified by TCAD Simulation. The Electrostatic …
Transistor has been proposed and verified by TCAD Simulation. The Electrostatic …
Comparative Analysis of TFET Structures for Low Power Sensor Design
P Kumar, T Chaudhary, B Raj - 2024 IEEE Third International …, 2024 - ieeexplore.ieee.org
The use of biosensors is growing in significance in the quickly evolving world of technology
today. Due to their extensive utilization, biosensors have sparked a great deal of research …
today. Due to their extensive utilization, biosensors have sparked a great deal of research …
[图书][B] Electrical and electronic devices, circuits and materials: Design and applications
The increasing demand in home and industry for electronic devices has encouraged
designers and researchers to investigate new devices and circuits using new materials that …
designers and researchers to investigate new devices and circuits using new materials that …
Improving on current using new double-material heterojunction gate all around TFET (DMHJGAA TFET): Modeling and simulation
P Vimala, N Shree, U Priyadarshini… - International Journal of …, 2021 - World Scientific
Transistor, which is the building block of all electronic devices, has continuously scaled
down its dimensions for better efficiency since the advent of CMOS circuits. Due to the …
down its dimensions for better efficiency since the advent of CMOS circuits. Due to the …
Study on the nonlinear output characteristic of tunnel field-effect transistor
This paper investigates the output characteristics in tunnel field-effect transistor (TFET). The
nonlinear current (NLC) in output characteristics has remained as a critical issue for …
nonlinear current (NLC) in output characteristics has remained as a critical issue for …