The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin dielectric
T Hashizume, S Ootomo, H Hasegawa - Applied physics letters, 2003 - pubs.aip.org
We investigated effects of electronic states at free surfaces of AlGaN/GaN heterostructure
field-effect transistors (HFETs) on the inner current transport at the heterointerfaces. The …
field-effect transistors (HFETs) on the inner current transport at the heterointerfaces. The …
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
The influence of AlGaN and GaN cap layer thickness on Hall sheet carrier density and
mobility was investigated for Al 0.32 Ga 0.68 N/GaN and GaN/Al 0.32 Ga 0.68 N/GaN …
mobility was investigated for Al 0.32 Ga 0.68 N/GaN and GaN/Al 0.32 Ga 0.68 N/GaN …
Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
T Hashizume, S Ootomo, T Inagaki… - Journal of Vacuum …, 2003 - pubs.aip.org
We have systematically investigated effects of plasma processing, formation of Si-based
dielectrics, and formation of a thin Al 2 O 3 film on the chemical and electronic properties of …
dielectrics, and formation of a thin Al 2 O 3 film on the chemical and electronic properties of …
Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor
K Tanaka, T Morita, H Umeda, S Kaneko… - Applied Physics …, 2015 - pubs.aip.org
Current collapse is suppressed up to 800 V of drain voltage in our proposed device, Hybrid-
Drain-embedded Gate Injection Transistor (HD-GIT), where an additional p-GaN layer is …
Drain-embedded Gate Injection Transistor (HD-GIT), where an additional p-GaN layer is …
Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes
T Hashizume, H Hasegawa - Applied surface science, 2004 - Elsevier
Effects of device processing on chemical and electronic properties of AlGaN surfaces were
investigated. The X-ray photoelectron spectroscopy analysis showed serious deterioration …
investigated. The X-ray photoelectron spectroscopy analysis showed serious deterioration …
Testing the temperature limits of GaN-based HEMT devices
D Maier, M Alomari, N Grandjean… - … on device and …, 2010 - ieeexplore.ieee.org
The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure
FETs has been evaluated by a stepped temperature test routine under large-signal …
FETs has been evaluated by a stepped temperature test routine under large-signal …
Comprehensive study on initial thermal oxidation of GaN (0001) surface and subsequent oxide growth in dry oxygen ambient
T Yamada, J Ito, R Asahara, K Watanabe… - Journal of applied …, 2017 - pubs.aip.org
Initial oxidation of gallium nitride (GaN)(0001) epilayers and subsequent growth of thermal
oxides in dry oxygen ambient were investigated by means of x-ray photoelectron …
oxides in dry oxygen ambient were investigated by means of x-ray photoelectron …
210-GHz InAlN/GaN HEMTs with dielectric-free passivation
Lattice-matched depletion-mode InAlN/AlN/GaN high-electron mobility transistors (HEMTs)
on a SiC substrate were fabricated, for the first time, with a dielectric-free passivation (DFP) …
on a SiC substrate were fabricated, for the first time, with a dielectric-free passivation (DFP) …
Interface charge engineering for enhancement-mode GaN MISHEMTs
TH Hung, PS Park, S Krishnamoorthy… - IEEE Electron …, 2014 - ieeexplore.ieee.org
We demonstrate an efficient approach to engineer the dielectric/AlGaN positive interface
fixed charges by oxygen plasma and post-metallization anneal. Significant suppression of …
fixed charges by oxygen plasma and post-metallization anneal. Significant suppression of …