Deep ultraviolet (DUV) light is easily absorbed by the ozone layer. There is no interference
from DUV light at ground and low altitude. Therefore, DUV detection has high applications in …

Ga 2 O 3-based heterojunction photodetectors integrate Ga 2 O 3 with partner
semiconductors via deposition techniques to obtain a high-quality interface, resulting in …

Beta-gallium oxide (β-Ga 2 O 3)-based heterojunction photodetectors (HJPDs) based on pn
heterojunction have drawn a lot of attention since p-type doping of β-Ga 2 O 3 is challenging …

In this work, a PEDOT: PSS/Sn: α-Ga 2 O 3 hybrid heterojunction diode (HJD) photodetector
was fabricated by spin-coating highly conductive PEDOT: PSS aqueous solution on the mist …

The growing demand for efficient and cost-effective optoelectronic devices has motivated
extensive research into advanced photodetector architectures. This work realizes a robust …

Lead-free perovskite-like semiconductors exhibit promising optoelectronic properties for
various applications, including signal detection. However, the photocurrent density in these …

In recent years, heterojunction photodetectors have been proposed as promising
optoelectronics. The heterojunction photodetectors have garnered attention on a global …

All-inorganic perovskites, with their low-cost, simple processes and superior heat stability,
have become potential candidate materials for photodetectors (PDs). However, they have no …

The effects of different electrode structures on the device performance of–(AlxGa1− x)
2O3/Ga2O3 heterostructure metal-semiconductor–metal photodetectors (MSM PDs) have …

Beta-gallium oxide (β-Ga2O3) has attracted a lot of interest as a prospective ultra-wide
bandgap (UWBG) material due to its unique physical properties for harsh condition …