Conductive bridge random access memory (CBRAM): challenges and opportunities for memory and neuromorphic computing applications
Due to a rapid increase in the amount of data, there is a huge demand for the development
of new memory technologies as well as emerging computing systems for high-density …
of new memory technologies as well as emerging computing systems for high-density …
Advances in Emerging Photonic Memristive and Memristive‐Like Devices
Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic
memristive and memristive‐like devices exhibit an attractive future in constructing novel …
memristive and memristive‐like devices exhibit an attractive future in constructing novel …
The coexistence of threshold and memory switching characteristics of ALD HfO 2 memristor synaptic arrays for energy-efficient neuromorphic computing
The development of bioinspired electronic devices that can mimic the biological synapses is
an essential step towards the development of efficient neuromorphic systems to simulate the …
an essential step towards the development of efficient neuromorphic systems to simulate the …
Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems
The development of artificial synaptic devices is a crucial step for the realization of efficient
bio-inspired neuromorphic computing systems. In this work, the bilayer ZrO 2/ZTO-based …
bio-inspired neuromorphic computing systems. In this work, the bilayer ZrO 2/ZTO-based …
Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses
Investigating the promising chalcogenide materials for the development of memory and
advanced neuromorphic computing applications is a critical step in realizing electronic …
advanced neuromorphic computing applications is a critical step in realizing electronic …
Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array
In this Letter, we present reset-voltage-dependent precise tuning operation of TiO x/Al 2 O 3-
based memristive devices. For the high resistance state (HRS) with high reset voltage …
based memristive devices. For the high resistance state (HRS) with high reset voltage …
Towards engineering in memristors for emerging memory and neuromorphic computing: A review
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …
device structure with two terminals, fulfill almost all of the fundamental requirements of …
Study on multilevel resistive switching behavior with tunable ON/OFF ratio capability in forming-free ZnO QDs-based RRAM
Resistive random access memories (RRAMs) have attracted tremendous attention due to
their miniaturized size, low power consumption, high response speed, and simple …
their miniaturized size, low power consumption, high response speed, and simple …
Dependence of InGaZnO and SnO2 thin film stacking sequence for the resistive switching characteristics of conductive bridge memory devices
We have investigated the switching mechanism of conductive bridge random access
memory (CBRAM) with Ag/SnO 2/Pt, Ag/InGaZnO (IGZO)/Pt and their hybrid oxide devices …
memory (CBRAM) with Ag/SnO 2/Pt, Ag/InGaZnO (IGZO)/Pt and their hybrid oxide devices …
Kinetic Monte Carlo analysis of data retention in Al: HfO2-based resistive random access memories
S Aldana, E Pérez, F Jiménez-Molinos… - Semiconductor …, 2020 - iopscience.iop.org
Abstract Kinetic Monte Carlo resistive random access memory simulations are used to
understand different retention experiments performed at several temperatures. The physics …
understand different retention experiments performed at several temperatures. The physics …