[HTML][HTML] Effect of electron conduction on the read noise characteristics in ReRAM devices
K Schnieders, C Funck, F Cüppers, S Aussen… - APL Materials, 2022 - pubs.aip.org
The read variability of redox based resistive random access memory is one of the key
characteristics with regard to its application in both data storage and novel computation in …
characteristics with regard to its application in both data storage and novel computation in …
Random telegraph noise in highly scaled nMOSFETs
JP Campbell, J Qin, KP Cheung, LC Yu… - 2009 IEEE …, 2009 - ieeexplore.ieee.org
Recently, 1/f and random telegraph noise (RTN) studies have been used to infer information
about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a …
about bulk dielectric defects' spatial and energetic distributions. These analyses rely on a …
Digital computation in subthreshold region for ultralow-power operation: A device–circuit–architecture codesign perspective
Ultralow-power dissipation can be achieved by operating digital circuits with scaled supply
voltages, albeit with degradation in speed and increased susceptibility to parameter …
voltages, albeit with degradation in speed and increased susceptibility to parameter …
Modeling random telegraph noise as a randomness source and its application in true random number generation
The random telegraph noise (RTN) is becoming more serious in advanced technologies.
Due to the unpredictability of the physical phenomenon, RTN is a good randomness source …
Due to the unpredictability of the physical phenomenon, RTN is a good randomness source …
Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits
In this paper, we comprehensively review the impacts of single-trap-induced random
telegraph noise (RTN) on FinFET, Ge/Si Nanowire FET and Tunnel FET (TFET). The …
telegraph noise (RTN) on FinFET, Ge/Si Nanowire FET and Tunnel FET (TFET). The …
Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices with SiON Tunneling Oxide
Random telegraph noise (RTN) measurements are performed on as-processed,
programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory …
programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory …
Temporal performance degradation under RTN: Evaluation and mitigation for nanoscale circuits
Random telegraph noise (RTN) is one of the critical reliability concerns in nanoscale circuit
design, and it is important to consider the impact of RTN on the circuits' temporal …
design, and it is important to consider the impact of RTN on the circuits' temporal …
Statistical analysis of random telegraph noise in digital circuits
Random telegraph noise (RTN) has become an important reliability issue at the sub-65nm
technology node. Existing RTN simulation approaches mainly focus on single trap induced …
technology node. Existing RTN simulation approaches mainly focus on single trap induced …
Reliability of nanoelectronic devices
AS Oates, KP Cheung - Nanoelectronics: Materials, Devices …, 2017 - Wiley Online Library
This chapter examines the dominant reliability issues for nanoelectronic devices, and which
have the potential to impact the rate of future technology progress. The Inter‐Metal‐Level …
have the potential to impact the rate of future technology progress. The Inter‐Metal‐Level …
Statistical Analysis and Predictive Modelling of Random Telegraph Noise in Nanometre Devices for Low Power Applications
KH Tok - 2023 - search.proquest.com
Abstract As the Internet of Things is becoming the new normal in electronics, one of the core
issues is low power consumption. The direct solution is to reduce the operation voltage …
issues is low power consumption. The direct solution is to reduce the operation voltage …