Recent advances on dielectrics technology for SiC and GaN power devices
Silicon carbide (SiC) and gallium nitride (GaN) devices are considered as optimal solutions
to meet the requirements of the modern power electronics. In fact, they can allow an …
to meet the requirements of the modern power electronics. In fact, they can allow an …
Binary group III-nitride based heterostructures: band offsets and transport properties
In the last few years, there has been remarkable progress in the development of group III-
nitride based materials because of their potential application in fabricating various …
nitride based materials because of their potential application in fabricating various …
On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
A TURUT - Turkish Journal of Physics, 2020 - journals.tubitak.gov.tr
It is expected the fact that the current following across metal-semiconductor (MS) rectifying
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
[HTML][HTML] MOCVD of AlN on epitaxial graphene at extreme temperatures
A Kakanakova-Georgieva, IG Ivanov… - …, 2021 - pubs.rsc.org
The initial stages of metal organic chemical vapor deposition (MOCVD) of AlN on epitaxial
graphene at temperatures in excess of 1200° C have been rationalized. The use of epitaxial …
graphene at temperatures in excess of 1200° C have been rationalized. The use of epitaxial …
A Comparative Study on the Electrical Properties of Vertical ( ) and (010) -Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates
This paper reports a comprehensive study on the anisotropic electrical properties of vertical
(2̅01) and (010) β-Ga 2 O 3 Schottky barrier diodes (SBDs). The devices were fabricated …
(2̅01) and (010) β-Ga 2 O 3 Schottky barrier diodes (SBDs). The devices were fabricated …
Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop
S Han, S Yang, K Sheng - IEEE Electron Device Letters, 2019 - ieeexplore.ieee.org
In this letter, fluorine-implanted termination (FIT) has been demonstrated in vertical GaN-on-
GaN Schottky barrier diodes (SBDs). Owing to the unique feature of F ions that can become …
GaN Schottky barrier diodes (SBDs). Owing to the unique feature of F ions that can become …
1.7-kV vertical GaN-on-GaN Schottky barrier diodes with helium-implanted edge termination
X Liu, F Lin, J Li, Y Lin, J Wu, H Wang… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this article, high-performance vertical gallium nitride (GaN)-on-GaN Schottky barrier
diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were …
diodes (SBDs) with helium (He)-implanted edge termination (ET) structure were …
Leakage current by Frenkel–Poole emission in Ni/Au schottky contacts on Al0. 83In0. 17N/AlN/GaN heterostructures
In order to determine the reverse-bias leakage current mechanisms in Schottky diodes on Al
0.83 In 0.17 N/AlN/GaN heterostructures, the temperature-dependent current-voltage …
0.83 In 0.17 N/AlN/GaN heterostructures, the temperature-dependent current-voltage …
Demonstration of AlN Schottky barrier diodes with blocking voltage over 1 kV
This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on
sapphire substrates by metal organic chemical vapor deposition. The device structure …
sapphire substrates by metal organic chemical vapor deposition. The device structure …
On temperature-dependent experimental IV and CV data of Ni/n-GaN Schottky contacts
We report the current-voltage (IV) and capacitance-voltage characteristics (CV) of Ni/n-GaN
Schottky diodes. Gallium nitride is a highly promising wide band gap semiconductor for …
Schottky diodes. Gallium nitride is a highly promising wide band gap semiconductor for …