Experimental studies of chalcogenide passivation (by sulfur and selenium atoms) of III–V
semiconductor surfaces are analyzed. The characteristic features of chemical-bond …

Проведен анализ работ, посвященных халькогенидной пассивации (атомами серы и
селена) поверхности полупроводников AIIIBV. Рассмотрены особенности …

The chemical state of sulfur on (NH 4) 2 S x-treated InAs (001) and thermal stability of the
surface have been studied by high-resolution x-ray photoelectron spectroscopy and low …

The possibilities of controlling the surface electronic properties of III–V semiconductors by
varying the adsorption chemistry are analyzed. Variations of the adsorption process …

The valence and core electronic surface states on the (111) 2× 2 surfaces of InSb and InAs
have been studied by angle-resolved photoelectron spectroscopy. Similarities in data show …

We have systematically studied the atomic structure and electronic properties of the Se-
treated GaAs (111) B surface using scanning tunneling microscopy, reflection high-energy …

Photocorrosion of n-GaAs and passivation by Na2S have been studied in a working
photoelectrochemical cell as a function of crystal face orientation. Time-resolved …

The growth of the organic semiconductor CuPc on the InSb (111) A surface at 300 K has
been studied using photoelectron spectroscopy. Core level emission data obtained using …

By means of photoelectron spectroscopy with synchrotron radiation we have studied the
surfaces of colloidally prepared InAs nanocrystals in the 30–60 Å size range. We find …

This study addresses the question of whether chemically deposited PbS thin films grown on
GaAs (111) are affected by the oppositely terminated substrate surfaces, gallium terminated …