The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …

It is only recently that the electric vehicle (EV) has evolved into a contemporary invention.
There has been a rapid acceleration in the development of EVs in a number of nations in …

The main objective of our paper is to propose an approach to studying the mechatronic
system's reliability through the reliability of their high electron mobility transistors (HEMT) …

The electro-thermomechanical modeling study of the High Electron Mobility Transistor
(HEMT) has been presented, all the necessary equations are detailed and coupled. This …

This paper reviews the theoretical and experimental works concerning one of the most
important parameters of wurtzite gallium nitride-thermal conductivity. Since the heat in …

Аннотация Выполнен анализ теоретических и экспериментальных исследований
одного из важнейших параметров нитрида галлия с кристаллической структурой типа …

This paper reviews the theoretical and experimental works concerning one of the most
important parameters of wurtzite gallium nitride–thermal conductivity. Since the heat in …

Le but principal de cet article, c'est d'étudier l'influence des paramètres géométriques de la
structure du transistor à haute mobilité d'électron (HEMT). Nous allons développer la …