Various surface treatments are applied for surface oxide removal prior to wafer-level Cu-to-
Cu thermo-compression bonding and the bonding quality is systematically analyzed in this …

Low-temperature hermetic bonding based on surface activation is useful for optical
microsystem packaging because high bonding temperatures may degrade microsystem …

Ar/N 2 plasma surface activation in ambient environment for Cu–Cu bonding has been
performed and characterized. Cu–Cu bonding occurs at room temperature and under …

The past few decades have seen the rapid development in computing power and wireless
communication achieved through invention of new technologies, discovery of new …

In this letter, an evolution of high-density (>; 10 6 cm-2) bonded Cu-Cu interconnects of 6-μm
pitch is successfully demonstrated using wafer-on-wafer thermocompression bonding. Cu …

In this paper, the surface of Cu film was treated with formic acid vapor and solution for Cu
low temperature bonding. After formic acid vapor/solution treatment, Cu film surface oxide …

Wafer-level vacuum packaging is vital in the fabrication of many microelectromechanical
systems (MEMS) devices and enables significant cost reduction in high-volume MEMS …

Low-temperature wafer-level Cu-to-Cu thermo-compression bonding and its reliability for
hermetic sealing application have been investigated in this work. The volume of the …

Wafer-level hydrophilic silicon direct bonding is demonstrated using ultraviolet ozone (UVO)
activation. The activation is performed at room temperature in atmospheric ambient for 3, 6 …

We proposed a novel Langasite (LGS) bonding method only using high temperature to solve
the manufacturing difficulty of the sealed microcavity of pressure sensors. The optimal …