We investigated the influence of the deposition parameters of SiO x and SiN x capping
layers in the plasma-enhanced chemical vapor deposition on the band gap energy shift of …

We have studied the influence of SiO 2 and TiO 2 dielectric layers on the atomic intermixing
of In x Ga 1− x As/InP quantum well structures using the impurity-free vacancy disordering …

We investigated the effects of the thickness of SiO 2 and Si 3 N 4 capping layer and the
distance of quantum wells from the sample surface on the intermixing of In 0.2 Ga 0.8 …

This work studied the implementation of multi-wavelength laser diodes on a single substrate
through the position-dependent bandgap modification of the In 0.2 Ga 0.8 As/GaAs multiple …

We report the impurity-free vacancy diffusion (IFVD) behaviors of In 0.86 Ga 0.14 As 0.64 P
0.36/In 0.88 Ga 0.12 As 0.25 P 0.75 multiple quantum well (MQW) structures using dielectric …

This work is focused on the characterization of different defects introduced on InP material
during the fabrication of classical photonic structures (ridge waveguides,…). These defects …

We fabricated ridge-waveguide laser diodes with In 0.2 Ga 0.8 As/GaAs multiple quantum
wells (MQWs) that have undergone impurity-free vacancy disordering (IFVD) using the SiO 2 …

We studied the impurity-free vacancy diffusion (IFVD) of In 0.2 Ga 0.8 As/GaAs multi-
quantum well (MQW) structures for advanced optoelectronic devices and their integration …

Photonic integration involves integration of several photonic devices on one common
platform. It is able to reduce the system size and cost, improve the system reliability, and …

We investigated the effect of rapid thermal annealing (RTA) on the photoluminescence (PL)
and electroluminescence of the In [SUB0. 53] Ga [SUB0. 47] As/In [SUB0. 53] Ga [SUB0. 6] …