The A-Ni chemical bond in AIIINiSb (AIII= Sc, Y, Er) half-Heusler materials triggers the formation of anomalous vacancy defects
Q Chen, L Ma, J Yang, L Xi - Materials Today Physics, 2024 - Elsevier
Defects exert a profound influence on thermoelectric materials by altering electronic band
structures and significantly impacting their performance. Despite being a potentially …
structures and significantly impacting their performance. Despite being a potentially …
Identifying point defects and ordering in the high-entropy layered oxide Li1. 5MO3-δ (M= Mn, Al, Fe, Co, Ni) for energy storage applications
ZR Mansley, C Huang, P Barry… - Materials Today …, 2024 - Elsevier
High-entropy layered oxides (HELOs) represent a very promising class of next-generation
battery cathodes, combining the well-studied properties of layered cathode materials such …
battery cathodes, combining the well-studied properties of layered cathode materials such …