CL Gan, U Hashim - Journal of Materials Science: Materials in Electronics, 2015 - Springer
The objective of this review is to study the evolution and key findings and critical technical challenges, solutions and future trend of bonding wires used in semiconductor electronics …
CJ Hang, CQ Wang, M Mayer, YH Tian, Y Zhou… - Microelectronics …, 2008 - Elsevier
Copper wires are increasingly used in place of gold wires for making bonded interconnections in microelectronics. There are many potential benefits for use of copper in …
Chapter 1 gives an introduction to Cu wire bonding technology. The advantages of Cu over Au, such as lower cost, higher mechanical strength, and higher electrical and thermal …
CW Tan, AR Daud, MA Yarmo - Applied Surface Science, 2002 - Elsevier
The interfacial shear (IS) force of copper ball onto aluminium-based bond pad in microelectronics packaging depends on the formation and growth of Cu–Al intermetallic …
A comparison study on the reliability of gold (Au) and copper (Cu) wire bonding is conducted to determine their corrosion and oxidation behavior in different environmental conditions …
FW Wulff, CD Breach, D Stephan… - Proceedings of 6th …, 2004 - ieeexplore.ieee.org
While the characterisation of intermetallic coverage and intermetallic phase (IP) growth in gold ball bonding on aluminium is quite well understood, there is relatively little literature …
The nanoscale interfacial characteristics of thermosonic copper ball bonding on aluminium metallization were investigated. It was found that ultrasonic vibration swept oxides of …
S Fu, Y Mei, X Li, C Ma, GQ Lu - IEEE Transactions on Power …, 2016 - ieeexplore.ieee.org
Nanosilver paste has become a promising lead-free die-attach material for power electronic packaging. This development solves the challenges faced by power device manufacturers to …
J Chen, YS Lai, YW Wang, CR Kao - Microelectronics reliability, 2011 - Elsevier
In this work, we investigate the intermetallic compound formation in Cu wire bonded device. Voids near the Cu side at the bond interface are clearly seen. Nevertheless, these voids do …