Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

From the viewpoint of application in power electronics, SiC possesses the greatest
advantage of having SiO 2 as its native oxide. Unfortunately, the usual thermal oxidation …

Unlike the Si-SiO 2 interface, the SiC-SiO 2 interface has large defect densities. Though
nitridation has been shown to reduce the defect density, the effect of H remains an open …

Possible defect structures, arising from the interaction of O 2 molecules with an ideal portion
of the SiC∕ Si O 2 interface, have been investigated systematically using density functional …

We have characterized SiO2/SiC interfaces by X-ray photoelectron spectroscopy in terms of
composition and bonds to clarify the reasons for the problems in silicon carbide metal-oxide …

We calculate charge transition levels of various defects at the SiC/SiO 2 interface within a
scheme based on hybrid density functionals, which accurately reproduce the involved band …

The interfacial region between silicon carbide (SiC) and its native oxide contains a high
density of interfacial traps, which is considered a major problem leading to a lower mobility …

SiC is unique amongst the wide bandgap semiconductors in that the natural thermal oxide is
stoichiometric SiO 2, as is the case for silicon. The possibility of producing devices such as …

Silicon has been the semiconductor of choice for microelectronics largely because of the
unique properties of its native oxide (SiO2) and the Si/SiO2 interface. For high-temperature …

The inversion channel mobility of 4H and 6H-SiC (0001) metal-oxide-semiconductor field-
effect transistors (MOSFETs) has been evaluated for its dependence on the re-oxidation …