The structure of thin (∼ 300nm) SiO x N y (0.23≤ x≤ 1.95, 0.01≤ y≤ 0.32) films produced
by plasma enhanced chemical vapor deposition is studied by infrared (IR) spectroscopy …

Silicon quantum dot multilayer (Si-QDML) is a promising material for a light absorber of all
silicon tandem solar cells due to tunable bandgap energy in a wide range depending on the …

We use high-temperature-stable silicon nitride membranes to investigate single layers of
silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The …

The optical, electrical and electro-optical properties of metal-insulator-semiconductor (MIS)
devices containing Si-rich silicon nitride (SRN) films are reported. The photoluminescence …

The achievement of an efficient all‐Si electrically‐pumped light emitter is a major milestone
in present optoelectronics still to be fulfilled. Silicon nanocrystals (Si NCs) are an attractive …

In the last few years, the emergence of studies concerning the resistive switching (RS)
phenomenon has resulted in the finding of a large amount of materials being capable of …

The effect of the oxide barrier thickness (t SiO2) reduction and the Si excess ([Si] exc)
increase on the electrical and electroluminescence (EL) properties of Si-rich oxynitride …

Abstract Silicon nanocrystals (Si NCs) embedded in Si‐based dielectrics provide a Si‐based
high band gap material (1.7 eV) and enable the construction of all‐crystalline Si tandem …

The optical properties of the Si/SiO 2 superlattice were investigated on the basis of the
optical absorption coefficient. We found that the optical bandgap can be tuned from 1.2 to …

Silicon quantum dot (Si-QD) embedded in amorphous silicon oxide is used for pin solar cell
on quartz substrate as a photogeneration layer. To suppress diffusion of phosphorus from an …