This review introduces hydrogen depth profiling by nuclear reaction analysis (NRA) via the
resonant 1 H (15 N, αγ) 12 C reaction as a versatile method for the highly depth-resolved …

This article reviews the effects of applied bias and temperature on Si/SiO 2 interface-trap
buildup and annealing rates. Electrical and spectroscopic methods are described to …

An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from
a historical perspective, focusing primarily on work presented at the annual IEEE Nuclear …

An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …

This paper presents a physics-based compact modeling approach that incorporates the
impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide …

Hydrogen is known to passivate Si dangling bonds at the Si− SiO 2 interface, but the
subsequent arrival of H+ at the interface causes depassivation of Si-H bonds. Here we …

We use molecular dynamics computer simulations to study the equilibrium properties of the
surface of amorphous silica. Two types of geometries are investigated:(i) clusters with …

Microscopic and macroscopic changes in the a-SiO 2 network induced by radiation are
reviewed. In the former case, ten intrinsic network defects are identified, most having been …

Interstitial hydrogen is calculated to act as a shallow donor in the candidate high dielectric
constant (k) gate oxides ZrO 2, HfO 2, La 2 O 3, Y 2 O 3, TiO 2, SrTiO 3, and LaAlO 3 but is …