III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

Analog switching in ferroelectric devices promises neuromorphic computing with the highest
energy efficiency if limited device scalability can be overcome. To contribute to a solution …

Nitride ferroelectrics have recently emerged as promising alternatives to oxide ferroelectrics
due to their compatibility with mainstream semiconductor processing. ScAlN, in particular …

We demonstrate robust ferroelectricity in single-crystalline wurtzite phase N-polar
ScAlN/GaN heterostructures grown on on-axis c-plane sapphire substrates by molecular …

Ferroelectricity enables key modern technologies from non-volatile memory to precision
ultrasound. The first known wurtzite ferroelectric Al1− xScxN has recently attracted attention …

The piezoelectric and spontaneous polarization of wurtzite Sc x Al 1− x N, Ga x Al 1− x N,
and In x Al 1− x N ternary compounds dramatically affects the electrical properties of …

Epitaxial Sc x Al 1− x N thin films of∼ 100 nm thickness grown on metal polar GaN
substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r) …

The technological and societal impacts of electronic devices based on Ge, Si, and
compound semiconductors like GaAs have been profound, fueling the decades long quest …

Modern wireless communication systems are increasingly complex with greater functionality
and impose new challenges on the radio frequency (RF) front-end design. One of the major …