The Schottky barrier junctions of tin disulfide (SnS2) on p-silicon were fabricated using sol–
gel spin technique. The photoresponse and junction properties of the diode were …

Dyes are frequently let out into the environment along with wastewater sans necessary
treatment. Fast, cost-effective, scientific and suitable elimination of dyes from wastewaters …

A reduced graphene oxide-the polyvinyl pyrrolidone (RGO-PVP) fibers (Fs)/p-Si
photodetector having photoconductive mode was fabricated by electrospinning of the fibers …

We present a novel resistance-compensated I–V method to extract the series resistance,
ideality factor, barrier height and built-in potential of a metal–semiconductor diode. We show …

In the present study, Schottky diodes (SDs) were produced with and without interlayer to
evaluate synthesis and characterization of pure and graphene (Gr)-doped organic/polymer …

In this study, the copper-aluminum-manganese-magnesium (Cu–Al–Mn–Mg) shape memory
alloy was utilized for the fabricated CuAlMnMg/n-Si/Al structure. The electrical characteristics …

Schottky barrier diode based on graphene oxide (GO) with the structure of Al/GO/n-Si/Al was
fabricated. The current–voltage characteristics of the diode were investigated under dark …

Thermally evaporated copper (II) acetylacetonate Cu (acac) 2 thin film deposited on the n-Si
wafer was used for light detection. The microstructural properties of copper (II) …

Male factor infertility has been diagnosed as the cause of infertility in about 20% of infertile
couples. Sperm analysis is the most common method for diagnosing infertility in a …

The electrical and photoconductivity properties of CdTe on p-type silicon photodiode were
investigated by current–voltage (I–V) and capacitance time (C–t) measurements. The current …