Suppression of excess noise in polarization enhanced back illuminated AlGaN solar-blind SAM APDs with modified multiplication layer

MNA Aadit, SN Juthi, US Khan - 2017 IEEE International …, 2017 - ieeexplore.ieee.org
In this paper, we propose a novel and improved structure of a solar-blind back illuminated
AlGaN separate absorption and multiplication avalanche photodiode (SAM APD) with a …

An Improved Graphene FET with Reduced Miller Capacitance Using Extended Gate Structure and Heterogeneous Oxide Dielectric

MNA Aadit, US Khan, SN Juthi - 2017 2nd International …, 2017 - ieeexplore.ieee.org
In this paper, we propose an improved design for graphene field effect transistors (GFETs) to
reduce Miller capacitance. We use an in-house built quantum solver of 2D materials to …