As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated
with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited …

Abstract Antimony selenide (Sb 2 Se 3) emerges with great potential for broad-spectrum
photonics due to the moderate band gap and excellent optical properties. However, the …

In 2 S 3 films have been grown on glass substrates by spray pyrolysis technique. The
deposition was carried out in a 300–500° C substrate temperature and the molar ratio S/In is …

Cadmium sulphide (CdS) is a well known n-type semiconductor that is widely used in solar
cells. Here we report preparation and characterization of chemical bath deposited CdS thin …

In the present study, the effect of annealing and Ar-plasma treatment on structural,
morphological and optical properties of thermally evaporated β-In 2 S 3 thin films has been …

SnS thin films were deposited by chemical bath deposition technique and treated using glow
discharge O2 plasma. The pressure discharge was 3 Torr, discharge voltage of 2.5 kV and …

The present study shows the modifications of structural, optical and electrical characteristics
that occur in tin sulfide (SnS) thin films treated in air and in nitrogen plasma at different …

In this paper, we report modifications of structural and optical, electrical properties that occur
in tin sulphide (SnS) treated in O2 plasma. The SnS thin films were deposited by chemical …

Abstract Indium sulfide (In 2 S 3) is a wide bandgap semiconductor, which is widely used as
a window/buffer layer in thin film solar cell applications. In 2 S 3 thin films were deposited …

Nanocrystalline β-In 2 S 3 thin films were grown using the chemical spray pyrolysis
technique. Conductive AFM studies showed the presence of a conduction path through the …