Light detection in the deep-ultraviolet (DUV) solar-blind waveband has attracted interest due
to its critical applications, especially in safety and space detection. A DUV photodetector …

Abstract Gallium oxide (Ga 2 O 3) is an ultrawide-bandgap semiconductor material that has
gained attention in recent years owing to its potential applications in optoelectronic devices …

Recently, the thin amorphous Ga 2 O 3 nanosheet attracts enormous interest in dielectric
and passivation materials, but it is still lack of the study about its photodetection …

Abstract Gallium oxide (Ga 2 O 3) is a natural candidate material for next-generation solar-
blind photodetectors (PDs). At present, it remains challenging to tune a balanced …

In recent years, β-Ga2O3/NiO heterojunction diodes have been studied, but reports in the
literature lack an investigation of an epitaxial growth process of high-quality single …

With the development of new broadband semiconductor materials and the expansion of
solar‐blind deep‐ultraviolet (SBDU) optoelectronics, the demand for high‐performance fully …

We have demonstrated the fast-speed and high-rejection-ratio solar-blind ultraviolet (UV)
photodetectors based on amorphous Ga 2 O 3 (a-Ga 2 O 3) films grown by atomic layer …

Ga 2 O 3 has been receiving more and more attention for solar blind photodetectors due to it
has a large direct bandgap corresponding to solar blind waveband. However, numerous …

To unravel the underlying causes of the opposite variation tendency in theoretical and
experimental thermal conductivity of copper/diamond composites as the increasing …

In this paper, high-temperature solar-blind photodetectors were fabricated based on
polycrystalline Ga 2 O 3 (poly-Ga 2 O 3) film which was prepared by annealing amorphous …