US7037794B2 - Raised STI process for multiple gate ox and sidewall protection on strained
Si/SGOI structure with elevated source/drain - Google Patents US7037794B2 - Raised STI …

A semiconductor structure and method of manufacturing is provided. The method of
manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a …

An integrated semiconductor structure containing at least one device formed upon a first
crystallographic surface that is optimal for that device, while another device is formed upon a …

(57) ABSTRACT A semiconductor device and method of manufacturing a semiconductor
device. The semiconductor device includes channels for a pFET and annFET. A SiGe layer …

A semiconductor device structure, includes a PMOS device 200 and an NMOS device 300
disposed on a substrate 1, 2, the PMOS device including a compressive layer 6 stressing an …

(Continued) the stress in the strained Si film, the relaxed SiGe block may be removed to
allow a second gate oxide to be formed on the surface previously occupied by the relaxed …

A part of the gate of a FINFET is replaced with a stress material to apply stress to the channel
of the FINFET to enhance electron and hole mobility and improve performance. The FINFET …

(57) ABSTRACT A semiconductor structure and method of manufacturing is provided. The
method of manufacturing includes forming shallow trench isolation (STI) in a substrate and …

A semiconductor device structure includes at least two field effect transistors formed on
same substrate, the first field effect transistor includes a spacer having a first width, the …

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5,670,798 5,679,965 5,683,934 5,840,593 5,861,651 5,880,040 5,940,716 5,940,736 …